MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or MJD6039, NJVMJD6039T4G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 6.25 C/W JC Thermal Resistance, JunctiontoAmbient (Note 2) R 71.4 C/W JA 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 30 mAdc, I = 0) 80 C B Collector Cutoff Current I Adc CEO (V = 40 Vdc, I = 0) 10 CE B ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 1 Adc, V = 4 Vdc) C CE 1000 (I = 2 Adc, V = 4 Vdc) C CE 500 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 2 Adc, I = 8 mAdc) 2.5 C B BaseEmitter On Voltage V Vdc BE(on) (I = 2 Adc, V = 4 Vdc) 2.8 C CE DYNAMIC CHARACTERISTICS SmallSignal Current Gain h fe (I = 0.75 Adc, V = 10 Vdc, f = 1 kHz) 25 C CE Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) CB E 100 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4 R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS V B C CC V = 30 V I = I CC B1 B2 D , MUST BE FAST RECOVERY TYPE, e.g.: t - 30 V 1 s I /I = 250 T = 25C C B J 1N5825 USED ABOVE I 100 mA B 2 MSD6100 USED BELOW I 100 mA B R C SCOPE TUT V t 2 R f B APPROX 1 + 8 V 0.8 8 k 120 D 51 1 0 t r 0.6 V 1 APPROX 0.4 + 4 V -12 V 25 s t V = 0 d BE(off) PNP FOR t AND t , D IS DISCONNECTED d r 1 t , t 10 ns NPN r f AND V = 0 2 0.2 DUTY CYCLE = 1% 0.04 0.1 0.2 0.4 0.6 1 2 4 0.06 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. I , COLLECTOR CURRENT (AMP) C Figure 1. Switching Times Test Circuit Figure 2. Switching Times