NSS40300MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low V CE(sat) PNP Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation NSS40300MZ4 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase C/W JunctiontoAmbient on 1 sq. (645 sq. mm) Collector pad on FR4 bd material R 64 JA JunctiontoAmbient on 0.012 sq. (7.6 sq. mm) Collector pad on FR4 bd material R 155 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I = 10 mAdc, I = 0 Adc) V 40 Vdc C B CEO(sus) EmitterBase Voltage (I = 50 Adc, I = 0 Adc) V 6.0 Vdc E C EBO Collector Cutoff Current (V = 40 Vdc) I 100 nAdc CB CBO Emitter Cutoff Current (V = 6.0 Vdc) I 100 nAdc BE EBO ON CHARACTERISTICS (Note 3) CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 0.5 Adc, I = 50 mAdc) 0.070 C B (I = 1.0 Adc, I = 20 mAdc) 0.150 C B (I = 3.0 Adc, I = 0.3 Adc) 0.400 C B BaseEmitter Saturation Voltage (I = 1.0 Adc, I = 0.1 Adc) V 1.0 Vdc C B BE(sat) BaseEmitter On Voltage (I = 1.0 Adc, V = 2.0 Vdc) V 0.9 Vdc C CE BE(on) DC Current Gain h FE (I = 0.5 Adc, V = 1.0 Vdc) 200 C CE (I = 1.0 Adc, V = 1.0 Vdc) 175 350 C CE (I = 3.0 Adc, V = 1.0 Vdc) 100 C CE DYNAMIC CHARACTERISTICS Output Capacitance (V = 10 Vdc, f = 1.0 MHz) C 40 pF CB ob Input Capacitance (V = 5.0 Vdc, f = 1.0 MHz) C 130 pF EB ib CurrentGain Bandwidth Product (Note 4) f MHz T (I = 500 mA, V = 10 V, F = 1.0 MHz) 160 C CE test 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. f = h f T FE test 2.5 2.0 T C 1.5 1.0 T A 0.5 0 25 50 75 100 125 150 T , TEMPERATURE (C) J Figure 1. Power Derating