UF3C170400K3S Qorvo

Name: UF3C170400K3S
Brand: Qorvo
SKU: UF3C170400K3S_Qorvo
Availability: OutOfStock
Rating: 5 (11 reviews)

UF3C170400K3S electronic component of Qorvo

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of UF3C170400K3S SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. UF3C170400K3S SiC MOSFETs are a product manufactured by Qorvo. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

Part No.	UF3C170400K3S
Manufacturer:	Qorvo
Category:	SiC MOSFETs
Description:	SiC MOSFETs 1700V/400mOhms,SICFET,G3,TO247-3
Datasheet:

Price (USD)

1: USD 15.0482 ea
Line Total: USD 15.05

Availability : 0

Qty	Unit Price
1	$ 15.0482
10	$ 14.4659
30	$ 13.4582
90	$ 12.5775

UF3C170400K3S More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Fri. 21 Nov to Thu. 27 Nov

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 15.0482
10	$ 14.4659
30	$ 13.4582
90	$ 12.5775

We are delighted to provide the UF3C170400K3S from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UF3C170400K3S and other electronic components in the SiC MOSFETs category and beyond.

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HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Qorvo Qorvo
Product Category SiC MOSFETs SiC MOSFETs
Mounting Style Through Hole Through Hole
Transistor Polarity N - Channel N - Channel
Number of Channels 1 Channel 1 Channel
Vds - Drain-Source Breakdown Voltage 1.7 kV 1.7 kV
Id - Continuous Drain Current 7.6 A 7.6 A
Rds On - Drain-Source Resistance 1.07 Ohms 1.07 Ohms
Vgs - Gate-Source Voltage - 25 V , + 25 V - 25 V , + 25 V
Vgs th - Gate-Source Threshold Voltage 6 V 6 V
Qg - Gate Charge 27.5 nC 27.5 nC
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 100 W 100 W
Channel Mode Enhancement Enhancement
Qualification AEC - Q101 AEC - Q101
Tradename SiC FET SiC FET
Package / Case TO - 247 - 3 TO - 247 - 3