2SAR512RTL ROHM

2SAR512R Datasheet PNP -2.0A -30V Middle Power Transistor llOutline SOT-346T Parameter Value SC-96 V -30V CEO I -2A C TSMT3 llFeatures llInner circuit 1)Suitable for Middle Power Driver 2)Complementary NPN Types:2SCR512R 3)Low V CE(sat) V =-400mV(Max.) CE(sat) (I /I =-700mA/-35mA) C B llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346T 2SAR512R 2928 TL 180 8 3000 MB (TSMT3) www.rohm.com 1/6 20160107 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.2SAR512R Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -30 V CBO V Collector-emitter voltage -30 V CEO V Emitter-base voltage -6 V EBO I -2 A C Collector current *1 I -4 A CP *2 P 0.5 W D Power dissipation *3 P 1.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -30 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -30 - - V CEO C voltage BV Emitter-base breakdown voltage I = -100A -6 - - V EBO E Collector cut-off current I V = -30V - - -1.0 A CBO CB I Emitter cut-off current V = -4V - - -1.0 A EBO EB *4 Collector-emitter saturation voltage I = -700mA, I = -35mA - -200 -400 mV V C B CE(sat) DC current gain h V = -2V, I = -100mA 200 - 500 - FE CE C V = -10V, I = 100mA, CE E *4 Transition frequency - 430 - MHz f T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 15 - pF ob f = 1MHz I = -1A, C t Turn-On time - 30 - ns on I = -100mA, B1 I = 100mA, B2 t Storage time - 170 - ns stg V -10V, CC R = 10 L Fall time t - 15 - ns f See test circuit *1 PW=10ms ,Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(40400.7mm ). *4 Pulsed www.rohm.com 2/6 20160107 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.