2SARA41CT116S ROHM

2SARA41CT116S electronic component of ROHM
2SARA41CT116S ROHM
2SARA41CT116S Bipolar Transistors - BJT
2SARA41CT116S  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SARA41CT116S Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SARA41CT116S Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SARA41CT116S
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT -120V -50mA H. Volt Amplifier
Datasheet: 2SARA41CT116S Datasheet (PDF)
Price (USD)
1: USD 0.5913 ea
Line Total: USD 0.59 
Availability : 2813
  
Ship by Mon. 17 Nov to Wed. 19 Nov
QtyUnit Price
1$ 0.5913
10$ 0.3612
100$ 0.2232
500$ 0.1584
1000$ 0.1419
3000$ 0.1221
6000$ 0.1144
9000$ 0.1023
24000$ 0.1023

Availability 2813
Ship by Mon. 17 Nov to Wed. 19 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5913
10$ 0.3612
100$ 0.2232
500$ 0.1584
1000$ 0.1419
3000$ 0.1221
6000$ 0.1144
9000$ 0.1023
24000$ 0.1023

   
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We are delighted to provide the 2SARA41CT116S from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SARA41CT116S and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SARA41C / 2SA1579U3 Datasheet High-voltage Amplifier Transistor (-120V, -50mA) llOutline Parameter Value SOT-23 SOT-323 V -120V CEO I -50mA C 2SARA41C 2SA1579U3 (SST3) (UMT3) llFeatures llInner circuit 1)High breakdown voltage. (BV =-120V) CEO 2)Complements the 2SCRC41C/2SC4102U3 llApplication HIGH VOLTAGE AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 2SARA41C 2924 T116 180 8 3000 K1 (SST3) SOT-323 2SA1579U3 2021 T106 180 8 3000 R (UMT3) www.rohm.com 1 / 7 20181227 - Rev.002 2018 ROHM Co., Ltd. All rights reserved. 2SARA41C / 2SA1579U3 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V -120 V CBO Collector-emitter voltage V -120 V CEO V Emitter-base voltage -5 V EBO I Collector current -50 mA C *1 P 200 mW D 2SARA41C *2 P Power dissipation 350 mW D P 2SA1579U3 200 mW D Junction temperature T 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -120 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -120 - - V CEO C voltage BV I = -50A Emitter-base breakdown voltage -5 - - V EBO E I V = -100V Collector cut-off current - - -500 nA CBO CB I Emitter cut-off current V = -4V - - -500 nA EBO EB Collector-emitter saturation voltage V I = -10mA, I = -1mA - - -500 mV CE(sat) C B h V = -6V, I = -2mA DC current gain 180 - 560 - FE CE C V = -12V, I = 2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = -12V, I = 0A, CB E C Output capacitance - 3.2 - pF ob f = 1MHz hFE values are calssified as follows : rank R S - - - h 180-390 270-560 - - - FE *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board (7.05.00.6mm). www.rohm.com 2/6 20181227 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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