2SC4726 Datasheet High-Frequency Amplifer Transistor (11V, 50mA, 3.2GHz) llOutline SOT-416 Parameter Value SC-75A V 11V CEO I 50mA C EMT3 llFeatures llInner circuit 1)High transition frequency. (Typ. f =3.2GHz) T 2)Small rbb Cc and high gain.(Typ.4ps) 3)Small NF. llApplication HIGH FREQUENCY AMPLIFIER, FREQUENCY CONVERTER, FREQUENCY MIXER, LOCAL OSCILLATOR llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-416 2SC4726 1616 TL 180 8 3000 AD (EMT3) llNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com 1/6 20150909 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SC4726 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 20 V CBO V Collector-emitter voltage 11 V CEO V Emitter-base voltage 3 V EBO I Collector current 50 mA C *1 P Power dissipation 150 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 20 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 11 - - V CEO C voltage Emitter-base breakdown voltage BV I = 10A 3 - - V EBO E I Collector cut-off current V = 10V - - 500 nA CBO CB I Emitter cut-off current V = 2V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 5mA - - 500 mV CE(sat) C B DC current gain h V = 10V, I = 5mA 56 - 180 - FE CE C V = 10V, I = -10mA, CE E Transition frequency f 1.4 3.2 - GHz T f = 500MHz V = 10V, I = 0A, CB E C Output capacitance - 0.8 1.5 pF ob f = 1MHz V = 6V, I = 2mA CB C N Noise figure - 3.5 - dB F f = 500MHz, R = 50 g hFE values are calssified as follows : rank N P - - - h 56-120 82-180 - - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/6 20150909 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.