2SCR513PT100 ROHM

2SCR513PT100 electronic component of ROHM
2SCR513PT100 ROHM
2SCR513PT100 Bipolar Transistors - BJT
2SCR513PT100  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SCR513PT100 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SCR513PT100 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SCR513PT100
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANS GP BJT NPN 50V 1A 4PIN
Datasheet: 2SCR513PT100 Datasheet (PDF)
Price (USD)
348: USD 0.9945 ea
Line Total: USD 346.09 
Availability : 5082
  
Ship by Wed. 19 Nov to Tue. 25 Nov
QtyUnit Price
348$ 0.9945
500$ 0.6149
1000$ 0.3978
4000$ 0.3813

Availability 1081
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 600
Multiples : 1
QtyUnit Price
600$ 0.4338


Availability 5082
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 348
Multiples : 1
QtyUnit Price
348$ 0.9945
500$ 0.6149
1000$ 0.3978
4000$ 0.3813


Availability 2910
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 374
Multiples : 1
QtyUnit Price
374$ 1.0829

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SCR513PT100 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SCR513PT100 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SCR513P Datasheet NPN 1.0A 50V Middle Power Transistor lOutline MPT3 Parameter Value V 50V CEO Base I Collector 1.0A C Emitter 2SCR513P lFeatures (SC-62) <SOT-89> 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR513P 3) Low V CE(sat) V =0.35V(Max.) CE(sat) (I /I =500mA/25mA) C B 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Motor driver , LED driver Base Power supply Emitter lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) 2SCR513P MPT3 4540 T100 180 12 1,000 NC lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V 6 V Emitter-base voltage EBO I 1.0 A DC C Collector current *1 2.0 A Pulsed I CP *2 0.5 W P D Power dissipation *3 2.0 W P D T 150 C Junction temperature j T C Range of storage temperature -55 to +150 stg *1 Pw=10ms , single pulse *2 Each terminal mounted on a reference land *3 Mounted on a ceramic board (40400.7mm) www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.05 - Rev.B 1/6 Not Recommended for New DesignsData Sheet 2SCR513P lElectrical characteristics(Ta = 25C) Parameter Symbol Conditions Min. Typ. Max. Unit Collector-emitter BV I = 1mA 50 - - V CEO C breakdown voltage Collector-base BV I = 100mA 50 - - V CBO C breakdown voltage Emitter-base BV I = 100mA 6 - - V EBO E breakdown voltage I V = 50V Collector cut-off current - - 1 mA CBO CB I V = 4V Emitter cut-off current - - 1 mA EBO EB Collector-emitter *1 I = 500mA, I = 25mA V - 0.13 0.35 V C B CE(sat) saturation voltage h V = 2V, I = 50mA DC current gain 180 - 450 - FE CE C V = 10V, I = -200mA CE E Transition frequency f - 360 - MHz T f=100MH Z V = 10V, I = 0A, CB E Output capacitance C - 7 - pF ob f = 1MHz *2 Turn-on time - 40 - ns t on I =0.5A C I =50mA B1 *2 Storage time - 410 - ns t stg I = -50mA B2 V 10V CC *2 Fall time t - 75 - ns f *1 Pulsed *2 See switching time test circuit lSwitching time test circuit www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.05 - Rev.B 2/6 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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