X-On Electronics has gained recognition as a prominent supplier of BC858BHZGT116 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC858BHZGT116 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC858BHZGT116 ROHM

BC858BHZGT116 electronic component of ROHM
BC858BHZGT116 ROHM
BC858BHZGT116 Bipolar Transistors - BJT
BC858BHZGT116  Semiconductors

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See Product Specifications
Part No. BC858BHZGT116
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT TRANS DIGITAL PNP
Datasheet: BC858BHZGT116 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2962 ea
Line Total: USD 0.3 
Availability - 362
Ship by Wed. 23 Jul to Fri. 25 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
29
Ship by Fri. 01 Aug to Wed. 06 Aug
MOQ : 1
Multiples : 1
1 : USD 0.7292
10 : USD 0.5664
30 : USD 0.4972
100 : USD 0.2759
500 : USD 0.2499
1000 : USD 0.2351

362
Ship by Wed. 23 Jul to Fri. 25 Jul
MOQ : 1
Multiples : 1
1 : USD 0.2962
10 : USD 0.1813
100 : USD 0.108
500 : USD 0.0737
1000 : USD 0.066
3000 : USD 0.0561
6000 : USD 0.0506
9000 : USD 0.0429
24000 : USD 0.0418

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Qualification
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC858BHZGT116 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC858BHZGT116 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC858B HZG Datasheet PNP General purpose transistor AEC-Q101 Qualified llOutline SOT-23 Parameter Value V -30V CEO I -100mA C SST3 llFeatures llInner circuit 1)BV -30V (I =-1mA) CEO C 2)Complements the BC848B HZG llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 BC858B HZG 2924 T116 180 8 3000 G3K (SST3) www.rohm.com 1/6 20160617 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. BC858B HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -30 V CBO V Collector-emitter voltage -30 V CEO V Emitter-base voltage -5 V EBO I Collector current -100 mA C *1 P 200 mW D Power dissipation *2 P 350 mW D T Junction temperature 150 j T Range of storage temperature -65 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -30 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -30 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E V = -30V - - -100 nA CB Collector cut-off current I CBO V = -30V, T = 150 - - -4 A CB a V 1 I = -10mA, I = -0.5mA - - -300 mV CE(sat) C B Collector-emitter saturation voltage V 2 I = -100mA, I = -5mA - - -650 mV CE(sat) C B Base-emitter turn V V = -5V, I = -10mA -600 - -750 mV BE(on) CE C on voltage h DC current gain V = -5V, I = -2mA 210 - 480 - FE CE C V = -5V, I = 20mA, CE E f Transition frequency - 250 - MHz T f = 100MHz V = -10V, I = 0A CB E C Output capacitance - 4.5 - pF ob f = 1MHz *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board(7.05.00.6mm). www.rohm.com 2/6 20160617 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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