BCX19T116 ROHM

BCX19T116 electronic component of ROHM
BCX19T116 ROHM
BCX19T116 Bipolar Transistors - BJT
BCX19T116  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BCX19T116 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCX19T116 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BCX19T116
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT NPN 45V 500MA
Datasheet: BCX19T116 Datasheet (PDF)
Price (USD)
10: USD 0.099 ea
Line Total: USD 0.99 
Availability : 2861
  
Ship by Wed. 19 Nov to Tue. 25 Nov
QtyUnit Price
10$ 0.099
100$ 0.0772
300$ 0.0664
3000$ 0.0393
6000$ 0.035
9000$ 0.0328

Availability 2861
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.099
100$ 0.0772
300$ 0.0664
3000$ 0.0393
6000$ 0.035
9000$ 0.0328


Availability 2613
Ship by Mon. 17 Nov to Wed. 19 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.56
10$ 0.3437
100$ 0.2112
500$ 0.1485
1000$ 0.1353
3000$ 0.1177
6000$ 0.1078
9000$ 0.0946
24000$ 0.0946


Availability 2076
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 998
Multiples : 1
QtyUnit Price
998$ 0.2608
1035$ 0.2514
1069$ 0.2432


Availability 2236
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 683
Multiples : 1
QtyUnit Price
683$ 0.3809
1000$ 0.3549
2000$ 0.2325

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCX19T116 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCX19T116 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCX19 Datasheet NPN small signal transistor llOutline SOT-23 Parameter Value V 50V CES I 500mA C SST3 llFeatures llInner circuit 1)High gain and low saturation voltage. 2)Complements the BCX17. llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 BCX19 2924 T116 180 8 3000 GU1 (SST3) www.rohm.com 1/6 20160606 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. BCX19 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V 50 V CES Collector-emitter voltage V 45 V CEO Emitter-base voltage V 5 V EBO I 500 mA C Collector current I 1 A CP *1 P 200 mW D *2 Power dissipation P 350 mW D *3 P 425 mW D Junction temperature T 150 j T Range of storage temperature -65 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV I = 50A 50 - - V CES C Collector-emitter breakdown voltage BV I = 10mA 45 - - V CEO C Emitter-base breakdown voltage BV I = 50A 5 - - V EBO E V = 20V - - 100 nA CB Collector cut-off current I CBO V = 20V, T = 150 - - 5 A CB a Emitter cut-off current I V = 5V - - 10 A EBO EB Collector-emitter saturation voltage V I = 500mA, I = 50mA - - 620 mV CE(sat) C B Base-emitter turn V V = 1V, I = 500mA - - 1.2 V BE(on) CE C on voltage h 1 V = 1V, I = 100mA 100 - 600 FE CE C h 2 DC current gain V = 1V, I = 300mA 70 - - - FE CE C h 3 V = 1V, I = 500mA 40 - - FE CE C V = 5V, I = -20mA, CE E f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board(7.05.00.6mm). *3 Mounted on a ceramic board(15150.6mm). www.rohm.com 2/6 20160606 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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