DTA015T series PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet llOutline Parameter Value VMT3 EMT3F V -50V CEO I -100mA C R 100k 1 DTA015TM DTA015TEB (SC-105AA) (SC-89) UMT3F llFeatures 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external DTA015TUB (SC-85) input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing llInner circuit of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary NPN Types: DTC015T series 6) Lead Free/RoHS Compliant. llApplication B: BASE Switching circuit, Inverter circuit, Interface circuit, C: COLLECTOR Driver circuit E: EMITTER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTA015TM VMT3 1212 T2L 180 8 8000 51 DTA015TEB EMT3F 1616 TL 180 8 3000 51 DTA015TUB UMT3F 2021 TL 180 8 3000 51 www.rohm.com 1/6 20121023 - Rev.001 2012 ROHM Co., Ltd. All rights reserved. DTA015T series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -5 V EBO I Collector current -100 mA C DTA015TM 150 *1 Power dissipation DTA015TEB P 150 mW D DTA015TUB 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E I V = -50V Collector cut-off current - - -0.5 A CBO CB I Emitter cut-off current V = -4V - - -0.5 A EBO EB Collector-emitter saturation voltage V I / I = -5mA / -0.25mA - -0.05 -0.25 V CE(sat) C B h DC current gain V = -10V, I = -5mA 100 - 600 - FE CE C R Input resistance - 70 100 130 k 1 V = -10V, I = 5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference footprint *2 Characteristics of built-in transistor www.rohm.com 2/6 2012 ROHM Co., Ltd. All rights reserved. 20121023 - Rev.001