DTD113EC HZG 500mA/50V Digital transistor (with built-in resistors) Datasheet AEC-Q101 Qualified llOutline Parameter Value SOT-23 V 50V CC I 500mA C R 1.0k 1 R 1.0k (SST3) 2 llFeatures llInner circuit 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit) 2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on/off conditions need to be set for operation, making the device desigh easy. 4) Complementary PNP Types: DTB113EC HZG llApplication INVERTER, INTERFACE,DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 DTD113EC HZG 2924 T116 180 8 3000 F21 (SST3) www.rohm.com 1/5 20160704 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. DTD113EC HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -10 to 10 V IN *1 I Collector current 500 mA C *2 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 20mA 3.0 - - I(on) O O V Output voltage I = 50mA, I = 2.5mA - 100 300 mV O(on) O I I Input current V = 5V - - 7.2 mA I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I *3 G DC current gain V = 5V, I = 50mA 33 - - - I O O R Input resistance - 0.7 1.0 1.3 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = 10V, I = -50mA, CE E *1 f Transition frequency - 200 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 20160704 - Rev.001