QSX7TR ROHM

Name: QSX7TR
Brand: ROHM
SKU: QSX7TR_ROHM
Availability: InStock
Rating: 5 (11 reviews)

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of QSX7TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. QSX7TR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.	QSX7TR
Manufacturer:	ROHM
Category:	Bipolar Transistors - BJT
Description:	ROHM Semiconductor Bipolar Transistors - BJT TRANS GP BJT NPN 12V 1.5A 6PIN
Datasheet:	QSX7TR Datasheet (PDF)

Price (USD)

1: USD 1.175 ea
Line Total: USD 1.18

Availability : 2518

Ship by Thu. 20 Nov to Mon. 24 Nov

Qty Unit Price
1 $ 1.175
10 $ 0.725
100 $ 0.4356
500 $ 0.3432
1000 $ 0.2849
3000 $ 0.2288
6000 $ 0.2167
9000 $ 0.1936
24000 $ 0.1925

QSX7TR More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 2518

Ship by Thu. 20 Nov to Mon. 24 Nov

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 1.175
10 $ 0.725
100 $ 0.4356
500 $ 0.3432
1000 $ 0.2849
3000 $ 0.2288
6000 $ 0.2167
9000 $ 0.1936
24000 $ 0.1925

Availability 3652

Ship by Mon. 24 Nov to Fri. 28 Nov

MOQ : 250
Multiples : 1

Qty Unit Price
250 $ 1.2194
500 $ 0.7514
1000 $ 0.4937
3000 $ 0.4925

Specifications

Manufacturer

ROHM ROHM

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

RoHS - XON

Y Y

Mounting Style

Smd/Smt Smd/Smt

Package / Case

T SMT T SMT

Transistor Polarity

Npn Npn

Configuration

Dual Dual

Maximum DC Collector Current

1.5 A 1.5 A

Collector- Emitter Voltage VCEO Max

12 V 12 V

Collector- Base Voltage VCBO

15 V 15 V

Emitter- Base Voltage VEBO

6 V 6 V

Pd - Power Dissipation

1.25 W 1.25 W

Gain Bandwidth Product fT

400 Mhz 400 Mhz

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Series

Qsx7 Qsx7

Packaging

Reel Reel

Dc Current Gain Hfe Max

270 @ 200 mA @ 2 v 270 @ 200 mA @ 2 v

Brand

Rohm Semiconductor Rohm Semiconductor

Dc Collector/Base Gain Hfe Min

270 At 200 Ma At 2 V 270 At 200 Ma At 2 V

Factory Pack Quantity :

3000 3000

Height

0.85 mm 0.85 mm

Length

2.9 mm 2.9 mm

Continuous Collector Current

1.5 A 1.5 A

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Bjts - Bipolar Transistors Bjts - Bipolar Transistors

Subcategory

Transistors Transistors

Taric

8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

QSX7TR Alternative Parts

We are delighted to provide the QSX7TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QSX7TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

QSX7 Datasheet Complex Midium Power Transistor llOutline Parameter Tr1 and Tr2 SOT-457T V 12V CEO SC-95 I 1.5A C TSMT6 llFeatures llInner circuit 1)High current 2)Low saturation voltage V 200mV CE(sat) at I =500mA/I =25mA C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-457T QSX7 2928 TR 180 8 3000 X07 (TSMT6) www.rohm.com 1/6 20160408 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. QSX7 Datasheet llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Values Unit V Collector-base voltage 15 V CBO V Collector-emitter voltage 12 V CEO V Emitter-base voltage 6 V EBO I 1.5 A C Collector current *1 I 3 A CP *2 P 0.5 W/Total D Power dissipation *3*4 P 1.25 W/Total D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 15 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 12 - - V CEO C voltage BV Emitter-base breakdown voltage I = 10A 6 - - V EBO E Collector cut-off current I V = 15V - - 100 nA CBO CB Emitter cut-off current I V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 500mA, I = 25mA - 85 200 mV CE(sat) C B h DC current gain V = 2V, I = 200mA 270 - 680 - FE CE C V = 2V, I = -200mA, CE E f Transition frequency - 400 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 12 - pF ob f = 1MHz *1 Pw=1ms Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(25250.8mm) *4 0.9W per element must not be exceeded. www.rohm.com 2/6 20160408 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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Qty	Unit Price
1	$ 1.175
10	$ 0.725
100	$ 0.4356
500	$ 0.3432
1000	$ 0.2849
3000	$ 0.2288
6000	$ 0.2167
9000	$ 0.1936
24000	$ 0.1925

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