X-On Electronics has gained recognition as a prominent supplier of RBR40NS30ATL Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. RBR40NS30ATL Schottky Diodes & Rectifiers are a product manufactured by ROHM. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

RBR40NS30ATL ROHM

Name: RBR40NS30ATL
Brand: ROHM
SKU: RBR40NS30ATL_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RBR40NS30ATL electronic component of ROHM

RBR40NS30ATL Schottky Diodes & Rectifiers

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See Product Specifications

Part No.	RBR40NS30ATL
Manufacturer:	ROHM
Category:	Schottky Diodes & Rectifiers
Description:	Diode Array 1 Pair Common Cathode Schottky 30V 20A Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Datasheet:	RBR40NS30ATL Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1000: USD 1.1163 ea
Line Total: USD 1116.3

Availability - 0

MOQ: 1000 Multiples: 1000
Pack Size: 1000

RBR40NS30ATL More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
917 Ship by Wed. 23 Jul to Fri. 25 Jul MOQ : 1 Multiples : 1	1 : USD 3.8 10 : USD 2.2655 100 : USD 1.595 500 : USD 1.507 1000 : USD 1.353 2000 : USD 1.287

Specifications

Manufacturer ROHM ROHM
Product Category Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers
Package / Case TO - 263 - 3 , D²PAK (2 Leads + Tab) , TO - 263AB TO - 263 - 3 , D²PAK (2 Leads + Tab) , TO - 263AB
Series - -
Packaging Digi - Reel® Digi - Reel®
Part Status Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky
Voltage - Dc Reverse Vr Max 30 V 30 V
Current - Average Rectified Io Per Diode 20 A 20 A
Voltage - Forward Vf Max If 520 mV @ 20a 520 mV @ 20a
Speed Fast Recovery =< 500Ns, > 200Ma (Io) Fast Recovery =< 500Ns, > 200Ma (Io)
Current - Reverse Leakage Vr 600 uA @ 30v 600 uA @ 30v
Operating Temperature - Junction 150 C 150 C
Mounting Type Surface Mount Surface Mount
Supplier Device Package LPTS LPTS

We are delighted to provide the RBR40NS30ATL from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RBR40NS30ATL and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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Additional Infomation About Product

RBR40NS30A Schottky Barrier Diode Data sheet Outline V 30 V R I 40 A o I 100 A FSM Features Inner Circuit High reliability Power mold type Cathode common dual type Low V F Application Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking BR40NS30A Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 30 V RM Reverse voltage V Reverse direct voltage 30 V R 60Hz half sin waveformresistive load Average rectified forward current I 40 A o I /2 per diodeT =95Max. o c 60Hz half sin waveform Peak forward surge current I 100 A FSM non-repetitiveper diodeT =25 a (1) Junction temperature T - 150 j Storage temperature T - -55 150 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j JA Attention www.rohm.com 1/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/28_Rev.003RBR40NS30A Data sheet Electrical Characteristics (T =25C unless otherwise specified) j Parameter Symbol Conditions Min. Typ. Max. Unit (1) V Forward voltage I =20A - - 0.52 V F F (1) I V =30V Reverse current - - 600 A R R Note (1) Value per diode Thermal Characteristics Parameter Symbol Min. Typ. Max. Unit Per diode - - 0.81 /W (1) (2) R Thermal Resistance (Junction to case) JC Per device - - 0.47 /W (1) (3) R Thermal Resistance (Junction to ambient) - - 55 /W JA Notes (1) Value is guaranteed by design. (2) Transient dual interface measurement (TDIM) method. (3) Mounted on 50 x 50 x 1.6mm FR4 boardsingle-sided copper35m thicknessreference footprint. Characteristic Curves www.rohm.com 2/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/28_Rev.003

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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