Product Information

VNP10N07

VNP10N07 electronic component of STMicroelectronics

Datasheet
VNP10N07 SEMICONDUCTORS

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.036 ea
Line Total: USD 4.036

296 - Global Stock
Ships to you by
Fri. 29 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
296 - Global Stock


Ships to you by Fri. 29 Mar

MOQ : 1
Multiples : 1

Stock Image

VNP10N07
STMicroelectronics

1 : USD 4.036
25 : USD 2.018
50 : USD 1.8162
75 : USD 1.5135
100 : USD 1.3622

     
Manufacturer
Product Category
Number of Outputs
On Resistance - Max
Operating Supply Voltage
Mounting Style
Package / Case
Output Current
Series
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
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VNP10N07OMNIFE: FULLY AUTOPROTECTED POWER MOSFET TYPE V R I clamp DS(on) lim VNP10N07 70 V 0.1 10 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT 3 2 PIN 1 ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE TO-220 POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET STANDARD TO-220 PACKAGE DESCRIPTION tation and overvoltage clamp protect the chip The VNP10N07 is a monolithic device made in harsh enviroments. using STMicroelectronics VIPower Technology, Fault feedback can be detected by monitoring the intended for replacement of standard power voltage at the input pin. MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limi- BLOCK DIAGRAM 1/11 September 2013VNP10N07 ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit V Drain-source Voltage (V = 0) Internally Clamped V DS in V Input Voltage 18 V in I Drain Current Internally Limited A D I Reverse DC Output Current -14 A R V Electrostatic Discharge (C= 100 pF, R=1.5 K) 2000 V esd o P Total Dissipation at T = 25 C50 W tot c o T Operating Junction Temperature Internally Limited C j o T Case Operating Temperature Internally Limited C c o T Storage Temperature -55 to 150 C stg THERMAL DATA o R Thermal Resistance Junction-case Max 2.5 C/W thj-case o R Thermal Resistance Junction-ambient Max 62.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V Drain-source Clamp I = 200 mA V = 0 607080 V CLAMP D in Voltage V Drain-source Clamp I = 2 mA V = 0 55 V CLTH D in Threshold Voltage VINCL Input-Source Reverse Iin = -1 mA -1 -0.3 V Clamp Voltage I Zero Input Voltage V = 13 V V = 0 50 A DSS DS in Drain Current (V = 0) V = 25 V V = 0 200 A in DS in I Supply Current from V = 0 V V = 10 V 250 500 A ISS DS in Input Pin ON (* ) Symbol Parameter Test Conditions Min. Typ. Max. Unit V Input Threshold V = V I + Ii = 1 mA 0.8 3 V IN(th) DS in D n Voltage R Static Drain-source On V = 10 V I = 5 A 0.1 DS(on) in D Resistance V = 5 V I = 5 A 0.14 in D DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (* ) Forward V = 13 V I = 5 A 6 8 S fs DS D Transconductance C Output Capacitance V = 13 V f = 1 MHz V = 0 350 500 pF oss DS in 2/11

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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