Product Information

2SC3265-Y,LF

2SC3265-Y,LF electronic component of Toshiba

Datasheet
Toshiba Bipolar Transistors - BJT Bias Resistor Built-in transistor

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.105 ea
Line Total: USD 315

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 3000
Multiples : 3000

Stock Image

2SC3265-Y,LF
Toshiba

3000 : USD 0.0879
6000 : USD 0.087
9000 : USD 0.0861
12000 : USD 0.0852
15000 : USD 0.0844
24000 : USD 0.0836
30000 : USD 0.0827
75000 : USD 0.0819
150000 : USD 0.0811

0 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 3000
Multiples : 3000

Stock Image

2SC3265-Y,LF
Toshiba

3000 : USD 0.105
6000 : USD 0.0908
15000 : USD 0.0807
30000 : USD 0.0756
75000 : USD 0.067
150000 : USD 0.0645

0 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1

Stock Image

2SC3265-Y,LF
Toshiba

1 : USD 0.5625
10 : USD 0.4032
100 : USD 0.2284
500 : USD 0.1513
1000 : USD 0.116

0 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1

Stock Image

2SC3265-Y,LF
Toshiba

1 : USD 0.5625
10 : USD 0.4032
100 : USD 0.2284
500 : USD 0.1513
1000 : USD 0.116

0 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1

Stock Image

2SC3265-Y,LF
Toshiba

1 : USD 1.1651
10 : USD 0.8777
100 : USD 0.1988
500 : USD 0.1326
1000 : USD 0.1015
3000 : USD 0.0787
9000 : USD 0.0694
24000 : USD 0.0653
45000 : USD 0.0621

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif

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2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Power Switching Applications Unit: mm High DC current gain: h = 100 to 320 FE (1) Low saturation voltage: V = 0.4 V (max) CE (sat) (I = 500 mA, I = 20 mA) C B Complementary to 2SA1298 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 30 V CBO Collector-emitter voltage V 25 V CEO Emitter-base voltage V 5 V EBO Collector current I 800 mA C Base current I 160 mA B Collector power dissipation P 200 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high JEDEC TO-236MOD temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA SC-59 reliability significantly even if the operating conditions (i.e. TOSHIBA 2-3F1A operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.012 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 30 V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 0.1 A EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 25 V (BR) CEO C B Emitter-base breakdown voltage V I = 0.1 mA, I = 0 5 V (BR) EBO E C h FE (1) V = 1 V, I = 100 mA 100 320 CE C (Note) DC current gain h V = 1 V, I = 800 mA 40 FE (2) CE C Collector-emitter saturation voltage V I = 500 mA, I = 20 mA 0.4 V CE (sat) C B Base-emitter voltage V V = 1 V, I = 10 mA 0.5 0.8 V BE CE C Transition frequency f V = 5 V, I = 10 mA 120 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 13 pF ob CB E Note: h classification O: 100 to 200, Y: 160 to 320 FE (1) Marking Start of commercial production 1982-10 1 2014-03-01 2SC3265 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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