X-On Electronics has gained recognition as a prominent supplier of TTC5200 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. TTC5200 Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

TTC5200 Toshiba

TTC5200 electronic component of Toshiba
TTC5200 Toshiba
TTC5200 Bipolar Transistors - BJT
TTC5200  Semiconductors

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See Product Specifications
Part No. TTC5200
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: TRANSISTOR, AUDIO, NPN, 230V,15A, TO3PL
Datasheet: TTC5200 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.4651 ea
Line Total: USD 4.47 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 25 Jul to Thu. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 4.4651
10 : USD 2.4509
100 : USD 2.382

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
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TTC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC5200 Power Amplifier Applications Unit: mm High collector voltage: V = 230 V (min) CEO Complementary to TTA1943 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 230 V CBO Collector-emitter voltage V 230 V CEO Emitter-base voltage V 5 V EBO Collector current I 15 A C 1.BASE 2.COLLECTOR(HEAT SINK) Base current I 1.5 A B 3.EMITTER Collector power dissipation (Tc=25C) P 150 W C Junction temperature T 150 C j JEDEC Storage temperature range T 55 to 150 C stg JEITA TOSHIBA 2-21F1A Weight: 9.75 g (typ) Note 1 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-07-13 TTC5200 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ MaxUnit Collector cut-off current I V = 230V, I = 0 5.0 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 5.0 A EBO EB C Collector-emitter breakdown voltage V I = 50 mA, I = 0 230 V (BR) CEO C B h V = 5 V, I = 1 A 80 160 FE (1) CE C DC current gain h V = 5 V, I = 7 A 35 FE (2) CE C Collector-emitter saturation voltage V I = 8 A, I = 0.8 A 3.0 V CE (sat) C B Base-emitter voltage V V = 5 V, I = 7 A 1.5 V BE CE C Transition frequency f V = 5 V, I = 1 A 30 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 145 pF ob CB E Marking Part No. (or abbreviation code) TOSHIBA TTC5200 Lot No. JAPAN Note 2 Note 2 : A line under a Lot No. identifies the indication of product Labels. G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-07-13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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