DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D Device Low Input Capacitance V R (BR)DSS DS(on) T = 25C A Fast Switching Speed Low Input/Output Leakage 60m V = 10V 3.4A GS Q1 30V Totally Lead-Free Finish RoHS compliant (Note 1) 100m V = 4.5V 2.7A GS Halogen and Antimony Free. Green Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability 95m V = -10V -2.8A GS Q2 -30V 140m V = -4.5V -2.3A GS Mechanical Data Case: TSOT26 Description and Applications Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 This new generation MOSFET has been designed to minimize the on- Moisture Sensitivity: Level 1 per J-STD-020 state resistance (R ) and yet maintain superior switching DS(on) Terminals Connections: See Diagram performance, making it ideal for high efficiency power management Terminals: Finish Matte Tin annealed over Copper leadframe. applications. Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.013 grams (approximate) DC-DC Converters Power management functions Q1 Q2 D1 D2 TSOT26 G1 1 6 D1 G1 G2 S2 2 5 S1 G2 3 4 D2 S1 S2 Top View Top View N-Channel P-Channel Ordering Information (Note 3) Part Number Case Packaging DMG6602SVT-7 TSOT26 3000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. Halogen and Antimony freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. For packaging details, go to our website at DMG6602SVT Maximum Ratings Q1 TA = 25C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage 30 V V DSS Gate-Source Voltage 20 V V GSS Steady T = 25C 3.4 A Continuous Drain Current (Note 5) V = 10V I A GS D State 2.7 T = 70C A T = 25C 2.7 Steady A Continuous Drain Current (Note 5) V = 4.5V I A GS D State 2.2 T = 70C A Maximum Continuous Body Diode Forward Current (Note 5) IS 1.5 A Pulsed Drain Current (Note 5) 25 A I DM Maximum Ratings Q2 TA = 25C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = 25C -2.8 A A Continuous Drain Current (Note 5) V = -10V I GS D State -2.4 T = 70C A Steady T = 25C -2.3 A Continuous Drain Current (Note 5) V = -4.5V I A GS D State -2.1 T = 70C A Maximum Continuous Body Diode Forward Current (Note 5) IS -1.5 A Pulsed Drain Current (Note 5) I -20 A D Thermal Characteristics Characteristic Symbol Value Units T = 25C 0.84 A Total Power Dissipation (Note 4) W P D T = 70C 0.52 A Steady state 155 Thermal Resistance, Junction to Ambient (Note 4) C/W R JA t<10s 109 T = 25C 1.27 A Total Power Dissipation (Note 5) W P D T = 70C 0.8 A Steady state 102 Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 71 C/W Thermal Resistance, Junction to Case (Note 5) 34 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 10 May 2012 DMG6602SVT Diodes Incorporated www.diodes.com Document number: DS35106 Rev. 6 - 2 ADVANCE INFORMATION