MMBT6427
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
Epitaxial Planar Die Construction
A
SOT-23
Ideal for Low Power Amplification and Switching
C
Dim Min Max
High Current Gain
A 0.37 0.51
B C
Lead, Halogen and Antimony Free, RoHS Compliant
B 1.20 1.40 Gree Device (Notes 1 and 4)
TOP VIEW
B E C 2.30 2.50
D D 0.89 1.03
Mechanical Data E
G
E 0.45 0.60
Case: SOT-23 H
G 1.78 2.05
Case Material: Molded Plastic. UL Flammability
H 2.80 3.00
K
M
Classification Rating 94V-0
J 0.013 0.10
J
Moisture Sensitivity: Level 1 per J-STD-020D
K 0.903 1.10
L
Terminals: Solderable per MIL-STD-202, Method 208
L 0.45 0.61
C
Lead Free Plating (Matte Tin Finish annealed over Alloy M 0.085 0.180
42 leadframe).
0 8
Terminal Connections: See Diagram All Dimensions in mm
Marking (See Page 3): K1D
Ordering & Date Code Information: See Page 3
B E
Weight: 0.008 grams (approximate)
Maximum Ratings @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage V 40 V
CBO
Collector-Emitter Voltage V 40 V
CEO
Emitter-Base Voltage V 12 V
EBO
Collector Current - Continuous I 500 mA
C
Thermal Characteristics
Characteristic Symbol Value Unit
300 mW
Power Dissipation (Note 2) @ T = 25C P
A D
Thermal Resistance, Junction to Ambient (Note 2)@ T = 25C R 417 C/W
A JA
Operating and Storage Temperature Range T , T -55 to +150 C
J STG
Electrical Characteristics @T = 25C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage 40 V
V I = 100A, I = 0
(BR)CBO C E
Collector-Emitter Breakdown Voltage 40 V
V I = 10mA, I = 0
(BR)CEO C B
Emitter-Base Breakdown Voltage V 12 V I = 10A, I = 0
(BR)EBO E C
Collector Cutoff Current I 50 nA V = 30V, I = 0
CBO CB E
Collector Cutoff Current I 1.0 A V = 25V, I = 0
CEO CE B
Emitter Cutoff Current I 50 nA V = 10V, I = 0
EBO EB C
ON CHARACTERISTICS (Note 3)
I = 10mA, V = 5.0V
10,000 100,000 C CE
DC Current Gain 20,000 200,000
h I = 100mA, V = 5.0V
FE C CE
14,000 140,000
I = 500mA, V = 5.0V
C CE
1.2 I = 50mA, I = 0.5mA
C B
Collector-Emitter Saturation Voltage V V
CE(SAT)
1.5
I = 500mA, I = 0.5mA
C B
Base-Emitter Saturation Voltage V 2.0 V I = 500mA, I = 0.5mA
BE(SAT) C B
Base-Emitter On Voltage V 1.75 V I = 50mA, V =5.0V
BE(ON) C CE
SMALL SIGNAL CHARACTERISTICS
Output Capacitance 8.0 Typical pF
C V = 10V, f = 1.0MHz, I = 0
obo CB E
Input Capacitance C 15 Typical pF V = 0.5V, f = 1.0MHz, I = 0
ibo EB C
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at
400
1.10
1.05
350
1.00
0.95
300
0.90
250
0.85
0.80
200
0.75
0.70
150
0.65
0.60
100
0.55
0.50
50
0.45
0
0.40
200
0 25 50 75 100 125 150 175 1000
1 10 100
I , COLLECTOR CURRENT (mA)
T , AMBIENT TEMPERATURE (C)
C
A
Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
Fig. 1, Max Power Dissipation vs Ambient Temperature
1,000,000
1.6
1.5
1.4
1.3
100,000
1.2
1.1
1.0
10,000
0.9
0.8
0.7
0.6
1,000
0.5
0.4
0.3
0.2
100
0.1 1 10 100
10
1 100 1000
I , COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
C
Fig. 4, Base Emitter Voltage vs. Collector Current
Fig. 3, DC Current Gain vs Collector Current
1000
100
10
1
110 100
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Gain Bandwidth Product vs Collector Current
MMBT6427
DS30048 Rev. 9 - 2 2 of 3
Diodes Incorporated
www.diodes.com
h , DC CURRENT GAIN
FE
P , POWER DISSIPATION (mW)
D
f , GAIN BANDWIDTH PRODUCT (MHz)
T
V , COLLECTOR TO EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
V , BASE EMITTER VOLTAGE (V)
BE(ON)