X-On Electronics has gained recognition as a prominent supplier of MMSTA13-7 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. MMSTA13-7 Darlington Transistors are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

MMSTA13-7 Diodes Incorporated

MMSTA13-7 electronic component of Diodes Incorporated
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See Product Specifications
Part No.MMSTA13-7
Manufacturer: Diodes Incorporated
Category: Darlington Transistors
Description: Darlington Transistors 30V 200mW
Datasheet: MMSTA13-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1497 ea
Line Total: USD 449.1 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5288
10 : USD 0.4358
100 : USD 0.3245

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5288
10 : USD 0.4358
100 : USD 0.3245

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1497
6000 : USD 0.139

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMSTA13-7 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMSTA13-7 and other electronic components in the Darlington Transistors category and beyond.

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MMSTA13/MMSTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Type Available Dim Min Max (MMSTA63/MMSTA64) C A 0.25 0.40 Ideal for Low Power Amplification and Switching B 1.15 1.35 High Current Gain B C C 2.00 2.20 Ultra-Small Surface Mount Package D 0.65 Nominal Lead Free/RoHS Compliant (Note 2) BE E 0.30 0.40 Gree Device (Note 3 and 4) G G 1.20 1.40 H H 1.80 2.20 Mechanical Data K M J 0.0 0.10 Case: SOT-323 K 0.90 1.00 Case Material: Molded Plastic,Gree Molding J L 0.25 0.40 D E L Compound, Note 4. UL Flammability Classification M 0.10 0.18 Rating 94V-0 0 8 Moisture Sensitivity: Level 1 per J-STD-020C All Dimensions in mm Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 C Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). MMSTA13 Marking K2D, K3D, See Page 3 MMSTA14 Marking K3D, See Page 3 Ordering & Date Code Information: See Page 3 B E Weight: 0.006 grams (approximate) Maximum Ratings @T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 30 V CBO Collector-Emitter Voltage V 30 V CEO Emitter-Base Voltage V 10 V EBO Collector Current - Continuous (Note 1) I 300 mA C Power Dissipation (Note 1) P 200 mW d Thermal Resistance, Junction to Ambient (Note 1) 625 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics @T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Emitter Breakdown Voltage V 30 V I = 100A V = 0V (BR)CEO C BE Collector Cutoff Current 100 nA I V = 30V, I = 0 CBO CB E Emitter Cutoff Current 100 nA I V = 10V, I = 0 EBO EB C ON CHARACTERISTICS (Note 5) I = 10mA, V = 5.0V C CE DC Current Gain MMSTA13 5,000 MMSTA14 10,000 I = 10mA, V = 5.0V C CE h FE MMSTA13 10,000 I = 100mA, V = 5.0V C CE MMSTA14 20,000 I = 100mA, V = 5.0V C CE Collector-Emitter Saturation Voltage V 1.5 V I = 100mA, I = 100A CE(SAT) C B Base-Emitter Saturation Voltage V 2.0 V I = 100mA, V = 5.0V BE(SAT) C CE SMALL SIGNAL CHARACTERISTICS Output Capacitance C 8.0 Typical pF V = 10V, f = 1.0MHz, I = 0 obo CB E Input Capacitance C 15 Typical pF V = 0.5V, f = 1.0MHz, I = 0 ibo EB C V = 5.0V, I = 10mA, CE C Current Gain-Bandwidth Product f 125 MHz T f = 100MHz Note: 5. Short duration pulse test used to minimize self-heating effect. 200 1.10 I 1.05 C = 1000 I B 1.00 T = -50C 0.95 A 150 0.90 0.85 0.80 T = 25C 100 A 0.75 0.70 0.65 0.60 T = 150C 50 A 0.55 0.50 0.45 0 0.40 0 175 200 1,000 25 50 75 100 125 150 1 10 100 I , COLLECTOR CURRENT (mA) T , AMBIENT TEMPERATURE (C) C A Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current Fig. 1, Max Power Dissipation vs. Ambient Temperature 1,000,000 1.6 1.5 V = 5V CE T = -50C A 1.4 1.3 100,000 1.2 T = 25C A 1.1 1.0 0.9 10,000 0.8 T = 150C A 0.7 0.6 1,000 0.5 0.4 0.3 100 0.2 100 0.1 1 10 10 1,000 1 100 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Fig. 4, Base Emitter Voltage vs. Collector Current Fig. 3, DC Current Gain vs. Collector Current MMSTA13/MMSTA14 DS30165 Rev. 9 - 2 2 of 3 Diodes Incorporated www.diodes.com h, DC CURRENT GAIN FE P , POWER DISSIPATION (mW) D V, COLLECTOR TO EMITTER CE(SAT) SATURATION VOLTAGE (V) V , BASE EMITTER VOLTAGE (V) BE(ON)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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