Smart Low Side Power Switch Power HITFET BTS 3142D Features Product Summary Drain source voltage V Logic Level Input DS 42 V Input Protection (ESD) On-state resistance R 28 m DS(on) Nominal load current I 4.6 A Thermal shutdown D(Nom) Green product (RoHS compliant) Clamping energy E 3.5 J AS Overload protection Short circuit protection Overvoltage protection Current limitation P / PG-TO252-3-11 Analog driving possible Application All kinds of resistive, inductive and capacitive loads in switching or linear applications C compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb M Drain HITFET Pin 2 and 4 (TAB) Current Overvoltage- Limitation Protection In Gate-Driving Pin 1 Unit Over- Overload Short circuit ESD temperature Protection Protection Protection Pin 3 Source Datasheet 1 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3142D 1) Maximum Ratings at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit Drain source voltage V 42 V DS Drain source voltage for short circuit protection V 28 DS(SC) T = -40 ... +150 C j Continuous input current I mA IN -0.2V V 10V no limit IN V < -0.2V or V > 10V I 2 IN IN IN Operating temperature T C -40 ... +150 j Storage temperature T -55 ... +150 stg 4) Power dissipation P W tot T = 85 C 59 C 2 6cm cooling area , T = 85 C 1.1 A 1) Unclamped single pulse inductive energy E 3.5 J AS 2) 67.5 V Load dump protection V = V + V V LoadDump A S LD V = 0 and 10 V, t = 400 ms, R = 2 , IN d I R = 3 ,V = 13.5 V L A 2 kV Electrostatic discharge voltage (Human Body Model) V ESD according to ANSI/ESDA/JEDEC JS-001 (1.5 k, 100 pF) Thermal resistance R 1.1 K/W junction - case: thJC SMD: junction - ambient R thJA min. footprint 115 2 3) 6 cm cooling area 55 1 Not subject to production test, specified by design. 2 V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Loaddump 3 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for drain connection. PCB mounted vertical without blown air. 4 Not subject to production test, calculated by R /R and maximum allowed junction temperature thJA thJC Datasheet 2 Rev. 1.4, 2013-03-07