Product Information


AM29F080B-55EF electronic component of Infineon

NOR Flash Parallel 5V 8M-bit 1M x 8 55ns 40-Pin TSOP

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 8.55 ea
Line Total: USD 8.55

1 - Global Stock
Ships to you between
Wed. 06 Dec to Tue. 12 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - Global Stock

Ships to you between Wed. 06 Dec to Tue. 12 Dec

MOQ : 1
Multiples : 1


1 : USD 8.55

Product Category
Mounting Style
Package / Case
Interface Type
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Access Time Max
Pin Count
Address Bus
Operating Temp Range
Rad Hardened
Program/Erase Volt Typ
Operating Supply Voltage Typ
Operating Temperature Classification
Boot Type
Cell Type

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Spansion, Inc andCypress Semiconductor Corp have merged together to deliver high-performance, high-quality solutions at the heart of today s most advanced embedded systems, from automotive, industrial and networking platforms to highly interactive consumer and mobile devices. The new company Cypress Semiconductor Corp will continue to offerSpansion, Inc products to new and existing customers. Continuity of Specifications There is no change to this document as a result of offering the device as a Cypress product. Any changes that have been made are the result of normal document improvements and are noted in the document history page, where supported. Future revisions will occur when appropriate, and changes will be noted in a document history page. Continuity of Ordering Part Numbers Cypress continues to support existing part numbers. To order these products, please use only the Ordering Part Numbers listed in this document. For More Information Please contact your local sales office for additional information about Cypress products and solutions. Not Recommended for New DesignDATA SHEET Am29F080B 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS 5.0 V 10%, single power supply operation Minimum 1,000,000 program/erase cycles per sector guaranteed Minimizes system level power requirements 20-year data retention at 125 C Manufactured on 0.32 m process technology Reliable operation for the life of the system Compatible with 0.5 m Am29F080 device Package options High performance 40-pin TSOP Access times as fast as 55 ns 44-pin SO Low power consumption Compatible with JEDEC standards 25 mA typical active read current Pinout and software compatible with 30 mA typical program/erase current single-power-supply Flash standard 1 A typical standby current (standard access Superior inadvertent write protection time to active mode) Data Polling and toggle bits Flexible sector architecture Provides a software method of detecting program 16 uniform sectors of 64 Kbytes each or erase cycle completion Any combination of sectors can be erased. Ready/Busy output (RY/BY ) Supports full chip erase Provides a hardware method for detecting Group sector protection: program or erase cycle completion A hardware method of locking sector groups to Erase Suspend/Erase Resume prevent any program or erase operations within Suspends a sector erase operation to read data that sector group from, or program data to, a non-erasing sector, Temporary Sector Group Unprotect allows code then resumes the erase operation changes in previously locked sectors Hardware reset pin (RESET ) Embedded Algorithms Resets internal state machine to the read mode Embedded Erase algorithm automatically preprograms and erases the entire chip or any Command sequence optimized for mass storage combination of designated sectors Specific addresses not required for unlock cycles Embedded Program algorithm automatically writes and verifies bytes at specified addresses This Data Sheet states AMDs current technical specifications regarding the Product described herein. This Data Publication 21503 Rev: G Amendment: 8 Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Issue Date: November 11, 2009 Not Recommended for New Design

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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