PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET Power MOSFET Logic Level D Advanced Process Technology V = 55V DSS Ultra Low On-Resistance 175C Operating Temperature R = 13.5m Fast Switching DS(on) G Repetitive Avalanche Allowed up to Tjmax Lead-Free I = 42A D S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and D-Pak I-Pak reliable device for use in a wide variety of applications. IRLU2905ZPbF IRLR2905ZPbF Absolute Maximum Ratings Parameter Max. Units (Silicon Limited) I T = 25C Continuous Drain Current, V 10V GS 60 D C Continuous Drain Current, V 10V I T = 100C GS 43 A D C Continuous Drain Current, V 10V (Package Limited) I T = 25C 42 GS D C Pulsed Drain Current I 240 DM P T = 25C Power Dissipation 110 W D C Linear Derating Factor 0.72 W/C V Gate-to-Source Voltage 16 V GS Single Pulse Avalanche Energy E 57 mJ AS (Thermally limited) Single Pulse Avalanche Energy Tested Value E (Tested ) AS 85 Avalanche Current I AR See Fig.12a, 12b, 15, 16 A Repetitive Avalanche Energy E AR mJ T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 1.38 JC Junction-to-Ambient (PCB mount) R JA 40 C/W Junction-to-Ambient R 110 JA HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.053 V/C Reference to 25C, I = 1mA D R m Static Drain-to-Source On-Resistance 11 13.5 V = 10V, I = 36A DS(on) GS D m 20 V = 5.0V, I = 30A GS D m 22.5 V = 4.5V, I = 15A GS D V GS(th) Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A DS GS D gfs Forward Transconductance 25 S V = 25V, I = 36A DS D I DSS Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 16V GS Gate-to-Source Reverse Leakage -200 V = -16V GS Q g Total Gate Charge 23 35 I = 36A D Q gs Gate-to-Source Charge 8.5 nC V = 44V DS Q gd Gate-to-Drain Mille) Charge 12 V = 5.0V GS t d(on) Turn-On Delay Time 14 V = 28V DD t r Rise Time 130 I = 36A D t d(off) Turn-Off Delay Time 24 ns R = 15 G t Fall Time 33 V = 5.0V f GS L D D Internal Drain Inductance 4.5 Between lead, nH 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact C iss Input Capacitance 1570 V = 0V GS C Output Capacitance 230 V = 25V oss DS C rss Reverse Transfer Capacitance 130 pF = 1.0MHz C Output Capacitance 840 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C oss Output Capacitance 180 V = 0V, V = 44V, = 1.0MHz GS DS C eff. Effective Output Capacitance 290 V = 0V, V = 0V to 44V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 42 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 240 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 36A, V = 0V SD J S GS t Reverse Recovery Time 22 33 ns T = 25C, I = 36A, V = 28V rr DD J F di/dt = 100A/s Q Reverse Recovery Charge 14 21 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com