Preliminary Technical Information TM 900V XPT IGBT V = 900V IXYH40N90C3D1 CES TM GenX3 w/ Diode I = 40A C110 V 2.5V CE(sat) t = 110ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 150C 900 V CES J V T = 25C to 150C, R = 1M 900 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C 90 A C25 C G = Gate C = Collector I T = 110C 40 A C110 C E = Emitter Tab = Collector I T = 110C 25 A F110 C I T = 25C, 1ms 180 A CM C SSOA V = 15V, T = 125C, R = 5 I = 80 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 500 W Features C C T -55 ... +150 C J z Optimized for Low Switching Losses T 150 C JM z Square RBSOA T -55 ... +150 C z stg Positive Thermal Coefficient of Vce(sat) T Maximum Lead Temperature for Soldering 300 C L z Anti-Parallel Ultra Fast Diode T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD z High Current Handling Capability z M Mounting Torque 1.13/10 Nm/lb.in. International Standard Package d Weight 6g Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values Applications (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z High Frequency Power Inverters BV I = 250A, V = 0V 950 V CES C GE z UPS V I = 250A, V = V 3.5 5.5 V z GE(th) C CE GE Motor Drives z SMPS I V = V , V = 0V 25 A CES CE CES GE z PFC Circuits T = 125C 750 A J z Battery Chargers z I V = 0V, V = 20V 100 nA Welding Machines GES CE GE z Lamp Ballasts V I = 40A, V = 15V, Note 1 2.2 2.5 V CE(sat) C GE T = 150C 2.9 V J 2012 IXYS CORPORATION, All Rights Reserved DS100441A(02/13)IXYH40N90C3D1 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 40A, V = 10V, Note 1 14 24 S fs C CE C 2170 pF ies C V = 25V, V = 0V, f = 1MHz 160 pF P oes CE GE 1 2 3 C 40 pF res Q 74 nC g(on) Q I = 40A, V = 15V, V = 0.5 V 18 nC ge C GE CE CES Q 34 nC gc t 27 ns e d(on) t 54 ns Inductive load, T = 25C Terminals: 1 - Gate 2 - Collector ri J 3 - Emitter E 1.9 mJ I = 40A, V = 15V on C GE Dim. Millimeter Inches t 78 ns V = 0.5 V , R = 5 d(off) CE CES G Min. Max. Min. Max. t 110 ns fi A 4.7 5.3 .185 .209 Note 2 A 2.2 2.54 .087 .102 E 1.0 1.7 mJ 1 f of A 2.2 2.6 .059 .098 2 t 27 ns b 1.0 1.4 .040 .055 d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 125C t 54 ns J ri b 2.87 3.12 .113 .123 2 I = 40A, V = 15V E 2.7 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 0.5 V , R = 5 t 87 ns CE CES G d(off) E 15.75 16.26 .610 .640 t 150 ns Note 2 e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 1.2 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.25 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Reverse Diode (FRED) (T = 25C, Unless Otherwise Specified) Characteristic Value J Symbol Test Conditions Min. Typ. Max. V 2.8 V F I = 30A,V = 0V, Note 1 F GE T = 150C 1.6 V J I 4 A RM I = 30A,V = 0V, -di /dt = 100A/ s, T = 100C F GE F J V = 300V T = 100C t 100 ns R J rr R 0.9 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537