High Voltage, High Gain V = 1700V IXBT24N170 CES TM BIMOSFET Monolithic IXBH24N170 I = 24A C110 Bipolar MOS Transistor V 2.5V CE(sat) TO-268 (IXBT) G E Symbol Test Conditions Maximum Ratings C (Tab) V T = 25C to 150C 1700 V CES J TO-247 (IXBH) V T = 25C to 150C, R = 1M 1700 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM I T = 25C 60 A C25 C G I T = 110C 24 A C C (Tab) C110 C E I T = 25C, 1ms 230 A CM C G = Gate C = Collector SSOA V = 15V, T = 125C, R = 10 I = 50 A GE VJ G CM E = Emiiter Tab = Collector (RBSOA) Clamped Inductive Load V 1360 V CES P T = 25C 250 W C C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T 1.6mm (0.062 in.) from Case for 10s 300 C L z T Plastic Body for 10 seconds 260 C High Blocking Voltage SOLD z International Standard Packages M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. d z Low Conduction Losses Weight TO-268 4 g TO-247 6 g Advantages z Low Gate Drive Requirement z High Power Density Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. Applications J BV I = 250A, V = 0V 1700 V CES C GE z Switch-Mode and Resonant-Mode V I = 250A, V = V 2.5 5.0 V GE(th) C CE GE Power Supplies z Uninterruptible Power Supplies (UPS) I V = 0.8 V , V = 0V 25 A CES CE CES GE z T = 125C 500 A Laser Generators J z Capacitor Discharge Circuits I V = 0V, V = 20V 100 nA GES CE GE z AC Switches V I = I , V = 15V, Note 1 2.5 V CE(sat) C C110 GE T = 125C 2.4 V J 2013 IXYS CORPORATION, All Rights Reserved DS100190A(03/13) IXBT24N170 IXBH24N170 Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = I , V = 10V, Note 1 15 25 S fs C C110 CE C 2790 pF ies C V = 25V, V = 0V, f = 1MHz 163 pF oes CE GE C 60 pF res Q 140 nC g(on) Q I = I , V = 15V, V = 0.5 V 16 nC ge C C110 GE CE CES Q 60 nC Terminals: 1 - Gate 2,4 - Collector gc 3 - Emitter t 33 ns d(on) Resistive Switching Times, T = 25C J t 82 ns r I = I , V = 15V C C110 GE t 315 ns d(off) V = 850V, R = 10 CE G t 750 ns f t 35 ns d(on) Resistive Switching Times, T = 125C J t 155 ns r I = I , V = 15V C C110 GE t 325 ns d(off) V = 850V, R = 10 CE G t 960 ns f R 0.50 C/W thJC R TO-247 0.21 C/W thCS TO-247 Outline Reverse Diode P 1 2 3 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 24A, V = 0V 2.8 V F F GE = 12A, V = 0V, -di /dt = 100A/s I t 1.06 s F GE F rr V = 100V I 26 A e R RM Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 Note 1. Pulse test, t 300 s, duty cycle, d 2%. b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537