MCD312-16io1 V = 2x1600 V RRM Thyristor Diode Module I = 320 A TAV V = 1.06 V T Phase leg Part number MCD312-16io1 Backside: isolated 3 1 2 5 4 Features / Advantages: Applications: Package: Y1 International standard package Motor control, softstarter Isolation Voltage: V~ 3600 Direct copper bonded Al2O3-ceramic Power converter Industry standard outline with copper base plate Heat and temperature control for RoHS compliant Planar passivated chip industrial furnaces and chemical Soldering pins for PCB mounting Keyed gate/cathode twin pins processes Base plate: Copper Lighting control internally DCB isolated Solid state switches Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191209f 2019 IXYS all rights reservedMCD312-16io1 Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1700 V V max. non-repetitive reverse/forward blocking voltage RSM/DSM VJ T = 25C 1600 V V max. repetitive reverse/forward blocking voltage RRM/DRM VJ I reverse current, drain current V = 1 6 0 0 V T = 25C 1 mA R/D R/D VJ V = 1 6 0 0 V T = 1 4 0 C 40 mA R/D VJ forward voltage drop V I = 3 0 0 A T = 25C 1.12 V T T VJ I = 6 0 0 A 1.32 V T T = C 1.06 V I = 3 0 0 A 125 T VJ I = 6 0 0 A 1.29 V T average forward current T = 8 5 C T = 1 4 0 C 320 A I TAV C VJ RMS forward current I 180 sine 520 A T(RMS) V T = 1 4 0 C 0.80 V threshold voltage T0 VJ for power loss calculation only slope resistance r 0.68 m T 0.12 K/W R thermal resistance junction to case thJC thermal resistance case to heatsink R 0.04 K/W thCH P total power dissipation T = 25C 960 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 9.60 kA I TSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 10.4 kA R t = 10 ms (50 Hz), sine T = 1 4 0 C kA 8.16 VJ t = 8,3 ms (60 Hz), sine V = 0 V 8.82 kA R value for fusing It t = 10 ms (50 Hz), sine T = 45C 460.8 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 447.4 kAs R t = 10 ms (50 Hz), sine T = 1 4 0 C 332.9 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 323.3 kAs R junction capacitance V = 4 0 0 V f = 1 MHz T = 25C 438 pF C J R VJ P max. gate power dissipation t = 30 s T = 1 4 0 C 120 W GM P C t = 500 s 60 W P 20 W P average gate power dissipation GAV critical rate of rise of current T = 140C f = 50 Hz repetitive, I = 960 A 100 (di/dt) A/s cr VJ T 1 t = 2 0 0 s di /dt = A/s P G I = 1A V = V non-repet., I = 320 A 500 A/s G DRM T critical rate of rise of voltage V = V T = 140C 1000 V/s (dv/dt) VJ cr DRM R = method 1 (linear voltage rise) GK gate trigger voltage V V = 6 V T = 25C 2 V GT D VJ T = -40C 3 V VJ gate trigger current V = 6 V T = 25C 150 mA I VJ GT D T = -40C 220 mA VJ gate non-trigger voltage V V = V T = 140C 0.25 V GD D DRM VJ gate non-trigger current I 10 mA GD latching current t = 30 s T = 25C 200 mA I VJ L p I = 0.45A di /dt = 0.45 A/s G G holding current I V = 6 V R = T = 25C 150 mA H D GK VJ gate controlled delay time t V = V T = 25C 2 s VJ gd D DRM I = 1A di /dt = 1 A/s G G turn-off time V = 100 V I = 300A V = V T =125 C 200 s t q R T DRM VJ di/dt = 10 A/s dv/dt = 50 V/s t = 200 s p IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191209f 2019 IXYS all rights reserved