APTR3216P3BT

APTR3216P3BT Phototransistor DESCRIPTION PACKAGE DIMENSIONS Made with NPN silicon phototransistor chips FEATURES 3.2 mm x 1.6 mm SMD LED,1.05 mm thickness Mechanically and spectrally matched to the infrared emitting LED lamp Package: 2000 pcs / reel Moisture sensitivity level: 3 RoHS compliant APPLICATIONS Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology RECOMMENDED SOLDERING PATTERN (units : mm tolerance : 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.2(0.008 ) unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Max.Ratings Units Collector-to-Emitter Voltage 30 V Emitter-to-Collector Voltage 5 V Power Dissipation at(or below) 25C Free Air Temperature 100 mW Operating Temperature -40 to +85 C Storage Temperature -40 to +85 C Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 1 / 4 2018 Kingbright. All Rights Reserved. Spec No: DSAM2250 / 1203004760 Rev No: V.3 Date: 12/25/2018 APTR3216P3BT ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Parameter Symbol Min. Typ. Max. Units Test Conditions I = 100A C Collector-to-Emitter Breakdown Voltage V 30 - - V 2 BR CEO Ee = 0mW/cm I = 100A E Emitter-to-Collector Breakdown Voltage V 5 - - V BR ECO 2 Ee = 0mW/cm I = 2mA C Collector-to-Emitter Saturation Voltage V - - 0.8 V 2 CE (SAT) Ee = 20mW/cm V = 10V CE Collector Dark Current I - - 100 nA CEO 2 Ee = 0mW/cm Rise Time(10% to 90%) T - 15 - S R V = 5V CE I = 1mA C R = 1000 L Fall Time(90% to 10%) T - 15 - S F V = 5V CE 2 On State Collector Current I 0.1 0.3 - mA Ee = 1mW/cm (ON ) = 940nm Range of spectral bandwidth 670 - 1070 nm - 0.1 Wavelength of peak sensitivity - 940 - nm - p Angle of half sensitivity 2 1/2 - 140 - deg - TECHNICAL DATA RELATIVE SPECTRAL SENSITIVITY vs. WAVELENGTH RELATIVE RADIANT SENSITIVITY vs. ANGULAR DISPLACEMENT 100% 0 -15 15 T = 25 C a T = 25 C a -30 30 80% -45 45 60% 60 -60 40% 20% 75 -75 0% 600 700 800 900 1000 1100 1200 -90 90 Wavelength (nm) 1.0 0.5 0.0 0.5 1.0 Page 2 / 4 2018 Kingbright. All Rights Reserved. Spec No: DSAM2250 / 1203004760 Rev No: V.3 Date: 12/25/2018 Relative spectral sensitivity (a. u.) Relative sensitivity