SA10-11EWA

SA10-11EWA 26 mm (1.02 inch) Single Digit Numeric Display DESCRIPTION PACKAGE DIMENSIONS The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode FEATURES 1.02 inch digit height Low current operation Excellent character appearance High light output Easy mounting on P.C. boards or sockets Mechanically rugged Standard: gray face, white segment RoHS compliant APPLICATIONS Home and smart appliances Display time and digital combination Industrial and instrumental applications Numeric status Notes: 1. All dimensions are in millimeters (inches), Tolerance is 0.25(0.01 )unless otherwise noted. 2. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. SELECTION GUIDE 1 Iv (ucd) 10mA Emitting Color Part Number Lens Type Description (Material) Min. Typ. 14000 23000 Common Anode, High Efficiency Red SA10-11EWA White Diffused Rt. Hand Decimal (GaAsP/GaP) *3600 *6500 Notes: 1. Luminous intensity / luminous Flux: +/-15%. * Luminous intensity value is traceable to CIE127-2007 standards. Page 1 / 5 2020 Kingbright. All Rights Reserved. Spec No: DSAP8343 / 1301000148 Rev No: V.1A Date: 03/07/2020 SA10-11EWA ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Value Parameter Symbol Emitting Color Unit Typ. Max. Wavelength at Peak Emission I = 10mA High Efficiency Red 627 - nm F peak 1 Dominant Wavelength I = 10mA High Efficiency Red 617 - nm F dom Spectral Bandwidth at 50% REL MAX High Efficiency Red 45 - nm I = 10mA F Capacitance C High Efficiency Red 15 - pF Forward Voltage I = 10mA (Segment) 3.8 4.6 F 2 V High Efficiency Red V F Forward Voltage I = 10mA (DP) 1.9 2.3 F Reverse Current (V = 5V) (Per chip) I High Efficiency Red - 10 A R R Notes: 1. The dominant wavelength (d) above is the setup value of the sorting machine. (Tolerance d : 1nm. ) 2. Forward voltage: 0.1V. 3. Wavelength value is traceable to CIE127-2007 standards. 4. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Symbol Value Unit Power Dissipation (Per chip) P 75 mW D Reverse Voltage (Per chip) V 5 V R Junction Temperature T 125 C j Operating Temperature T -40 to +85 C op Storage Temperature T -40 to +85 C stg DC Forward Current (Segment) 30 I mA F DC Forward Current (DP) 30 Peak Forward Current (Segment) 1 160 I mA FM Peak Forward Current (DP) 160 Electrostatic Discharge Threshold (HBM) 8000 V - 2 Lead Solder Temperature 260C For 3-5 Seconds Notes: 1. 1/10 Duty Cycle, 0.1ms Pulse Width. 2. 2mm below package base. 3. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 2 / 5 2020 Kingbright. All Rights Reserved. Spec No: DSAP8343 / 1301000148 Rev No: V.1A Date: 03/07/2020