MHA183AS

High Performance Low Power Hall-Effect Sensor MHA18x Series FEATURES DESCRIPTION Low power CMOS process Wide operation voltage range: 1.65~5.5V Ultra-low power consumption, <5uA 1.8V Good RF noise immunity -40C to +85 C operation RoHS compliant APPLICATIONS TWS headset Smart meter Cover switch Figure 1: Signal Path Domestic appliances Laptop Industry Information furnished by MEMSIC is believed to be accurate and reliable. However, no responsibility is assumed by MEMSIC for its use, or for any MEMSIC Semiconductor (Tianjin) Co., Ltd. infringements of patents or other rights of third parties which may result from www.memsic.com its use. No license is granted by implication or otherwise under any patent or patent rights of MEMSIC. MEMSIC MHA18x Series Page 1 of 7 5/18/2022 Devices List Devices Package Polarity Output ESD-HBM Quantity / Reel MHA182AS-S SOT553 Single output S unipolar push pull 3.5KV 3000 MHA183AS SOT23-3L Single output Omnipolar push pull 3000 4.5KV SPECIFICATIONS (Measurements 25 C, unless otherwise noted VDD=1.8V unless otherwise specified) Parameter Conditions Min Typ Max Units Supply Voltage (V ) 1.65 1.8 5.5 V DD 2.5 5.0 A Supply Current -40~85 C 2.5 10.0 A Power Down Current 1.0 nA Operating Temperature -40 85 C Storage Temperature -55 125 C Awake Tim (Tawake) 50 100 s Period (Tperiod) 50 100 ms Duty Cycle 0.05 % Output High (VOH) IOUT=+0.5mA VDD-0.3 VDD-0.1 VDD+0.1 V Output Low (VOL) IOUT=-0.5mA -0.3 0.1 0.3 V Output Current -0.5 0.5 mA Sampling Frequency 20 Hz Magnetic Opening Point (B ) 27 37 47 Gauss OP Magnetic Releasing Point (B ) 17 27 37 Gauss RP Hysteresis Window (B ) 3 10 17 Gauss HYS MEMSIC MHA18x Series Page 2 of 7 5/18/2022