h High Performance Low Power Hall-Effect Sensor MHA100KN FEATURES DESCRIPTION Low power CMOS process Wide operation voltage range: 1.65~5.5V Ultra-low power consumption, <5uA 1.8V Good RF noise immunity Omnipolar operation Dual output, Unipolar Hall switch for N and S -40 C to +85 C operation RoHS compliant DFN4 package with 1.0mmx1.4mmx0.37mm APPLICATIONS TWS headset Figure 1: Signal Path Smart meter Cover switch MEMSIC, Inc. Information furnished by MEMSIC is believed to be accurate and reliable. However, no responsibility is assumed by MEMSIC for its use, or for any One Technology Drive, Suite 325, Andover, MA 01810, USA infringements of patents or other rights of third parties which may result from Tel: +1 978 738 0900 Fax: +1 978 738 0196 its use. No license is granted by implication or otherwise under any patent or www.memsic.com patent rights of MEMSIC. MEMSIC MHA100KN Preliminary Page 1 of 6 4/4/2020 SPECIFICATIONS (Measurements 25 C, unless otherwise noted VDD=1.8V unless otherwise specified) Parameter Conditions Min Typ Max Units Supply Voltage (VDD) 1.65 1.8 5.5 V 2.5 5.0 A Supply Current -40~85 C 2.5 10.0 A Power Down Current 1.0 nA Operating Temperature -40 85 C Storage Temperature -55 125 C Awake Tim (T ) 50 100 s awake Period (T ) 50 100 ms period Duty Cycle 0.05 % Output High (V ) I =+0.5mA V -0.3 V -0.1 V +0.1 V OH OUT DD DD DD Output Low (V ) I =-0.5mA -0.3 0.1 0.3 V OL OUT Output Current -0.5 0.5 mA Magnetic Opening Point (B ) 27 37 47 Gauss OP Magnetic Releasing Point (B ) 20 30 40 Gauss RP Hysteresis Window (BHYS) 2 7 Gauss MEMSIC MHA100KN Preliminary Page 2 of 6 4/4/2020