X-On Electronics has gained recognition as a prominent supplier of M29W400DB55N6E nor flash across the USA, India, Europe, Australia, and various other global locations. M29W400DB55N6E nor flash are a product manufactured by Micron. We provide cost-effective solutions for nor flash, ensuring timely deliveries around the world.

M29W400DB55N6E Micron

M29W400DB55N6E electronic component of Micron
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Part No.M29W400DB55N6E
Manufacturer: Micron
Category:NOR Flash
Description: NOR Flash Parallel 3V/3.3V 4M-bit 512K x 8/256K x 16 55ns 48-Pin TSOP Tray
Datasheet: M29W400DB55N6E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

31: USD 1.0638 ea
Line Total: USD 32.98

Availability - 0
MOQ: 31  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 31
Multiples : 1
31 : USD 1.0638
50 : USD 1.0041
100 : USD 0.9694

     
Manufacturer
Product Category
Mounting Style
Package / Case
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Access Time Max
Address Bus
Boot Type
Cell Type
Operating Temp Range
Pin Count
Program/Erase Volt Typ
Density
Operating Temperature Classification
Programmable
Rad Hardened
Operating Supply Voltage Typ
Deleted
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We are delighted to provide the M29W400DB55N6E from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the M29W400DB55N6E and other electronic components in the NOR Flash category and beyond.

M29W400DT M29W400DB 4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory Features Supply voltage V = 2.7 V to 3.6 V for Program, Erase CC and Read (1) SO44 (M) Access time: 45, 55, 70 ns Programming time 10 s per byte/word typical 11 memory blocks 1 boot block (top or bottom location) TSOP48 (N) 12 x 20 mm 2 parameter and 8 main blocks Program/Erase controller FBGA Embedded byte/word program algorithms Erase Suspend and Resume modes Read and Program another block during (1) TFBGA48 (ZA) Erase Suspend 6 x 9 mm Unlock bypass program command Faster production/batch programming FBGA Temporary block unprotection mode Low power consumption Standby and Automatic Standby TFBGA48 (ZE) 6 x 8 mm 100,000 Program/Erase cycles per block Electronic signature Manufacturer code: 0020h 1. These packages are no more in mass production. Top device code M29W400DT: 00EEh Bottom device code M29W400DB: 00EFh RoHS packages Automotive Device Grade 3 Temperature: 40 to 125 C Automotive grade certified April 2009 Rev 8 1/48 www.numonyx.com 1Contents M29W400DT, M29W400DB Contents 1 Description . 6 2 Signal descriptions . 13 2.1 Address inputs (A0-A17) . 13 2.2 Data inputs/outputs (DQ0-DQ7) 13 2.3 Data inputs/outputs (DQ8-DQ14) . 13 2.4 Data input/output or Address input (DQ15A-1) 13 2.5 Chip Enable (E) 13 2.6 Output Enable (G) 13 2.7 Write Enable (W) . 14 2.8 Reset/Block Temporary Unprotect (RP) 14 2.9 Ready/Busy output (RB) 14 2.10 Byte/Word Organization Select (BYTE) 14 2.11 V supply voltage 15 CC 2.12 V ground 15 SS 3 Bus operations 16 3.1 Bus Read . 16 3.2 Bus Write . 16 3.3 Output Disable . 16 3.4 Standby 16 3.5 Automatic Standby 16 3.6 Special bus operations . 17 3.7 Electronic signature . 17 3.8 Block protection and blocks unprotection . 17 4 Command interface . 19 4.1 Read/Reset command . 19 4.2 Auto Select command . 19 4.3 Program command 19 4.4 Unlock Bypass command . 20 4.5 Unlock Bypass Program command . 20 2/48

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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