MT18JSF1G72PDZ-1G6E1

8GB (x72, ECC, DR) 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF1G72PDZ 8GB Figure 1: 240-Pin RDIMM (MO-269 R/C B1) Features Module height: 30mm (1.181in.) DDR3 functionality and operations supported as defined in the component data sheet 240-pin, registered dual in-line memory module (RDIMM) Fast data transfer rates: PC3-14900, PC3-12800, PC3-10600, PC3-8500, or PC3-6400 Options Marking 8GB (1 Gig x 72) Operating temperature V = 1.5V 0.075V DD Commercial (0C T +70C) None A V = 3.03.6V DDSPD Package Supports ECC error detection and correction 240-pin DIMM (halogen-free) Z Nominal and dynamic on-die termination (ODT) for Frequency/CAS latency data, strobe, and mask signals 1.07ns CL = 13 (DDR3-1866) -1G9 1.25ns CL = 11 (DDR3-1600) -1G6 Dual rank 2 1.5ns CL = 9 (DDR3-1333) -1G4 On-board I C temperature sensor with integrated 1.87ns CL = 7 (DDR3-1066) -1G1 serial presence-detect (SPD) EEPROM 8 internal device banks Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry CL = CL = CL = RCD RP RC Grade Nomenclature 13 11 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G9 PC3-14900 1866 1333 1066 800 13.91 13.91 47.91 -1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 1066 800 667 15 15 52.5 -80B PC3-6400 800 667 15 15 52.5 PDF: 09005aef84865caa Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 jsf18c1gx72pdz.pdf - Rev. B 3/12 EN 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.8GB (x72, ECC, DR) 240-Pin DDR3 RDIMM Features Table 2: Addressing Parameter 8GB Refresh count 8K Row address 64K A 15:0 Device bank address 8 BA 2:0 Device configuration 4Gb (512 Meg x 8) Column address 1K A 9:0 Module rank address 2 S 1:0 Table 3: Part Numbers and Timing Parameters 8GB Modules 1 Base device: MT41J512M8, 4Gb DDR3 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18JSF1G72PDZ-1G9 8GB 1 Gig x 72 14.9 GB/s 1.07ns/1866 MT/s 13-13-13 MT18JSF1G72PDZ-1G6 8GB 1 Gig x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT18JSF1G72PDZ-1G4 8GB 1 Gig x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT18JSF1G72PDZ-1G1 8GB 1 Gig x 72 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Notes: 1. The data sheet for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT18JSF1G72PDZ-1G6E1. PDF: 09005aef84865caa Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 jsf18c1gx72pdz.pdf - Rev. B 3/12 EN 2011 Micron Technology, Inc. All rights reserved.