Product Information

MT48LC4M32B2P-6A XIT:L TR

MT48LC4M32B2P-6A XIT:L TR electronic component of Micron

Datasheet
DRAM SDRAM 128M 4MX32 TSOP

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1000
Multiples : 1000
1000 : USD 5.5122
10000 : USD 5.2896
100000 : USD 5.1838
N/A

Obsolete
0 - WHS 2

MOQ : 1000
Multiples : 1000
1000 : USD 7.1116
2000 : USD 6.93
4000 : USD 6.7663
6000 : USD 6.6017
10000 : USD 6.5183
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 9.8168
25 : USD 9.2104
50 : USD 9.0928
100 : USD 8.2915
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Mounting Style
Package / Case
Data Bus Width
Memory Size
Maximum Clock Frequency
Access Time
Supply Voltage - Max
Supply Voltage - Min
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Series
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Organization
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Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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128Mb: x32 Automotive SDRAM Features Automotive SDR SDRAM MT48LC4M32B2 1 Meg x 32 x 4 Banks Options Marking Features Configuration PC100-compliant 4 Meg x 32 (1 Meg x 32 x 4 banks) 4M32B2 Fully synchronous all signals registered on positive 1 Package OCPL edge of system clock 86-pin TSOP II (400 mil) TG Internal pipelined operation column address can 86-pin TSOP II (400 mil) Pb-free P be changed every clock cycle 90-ball VFBGA (8mm x 13mm) F5 Internal banks for hiding row access/precharge 90-ball VFBGA (8mm x 13mm) Pb- B5 Programmable burst lengths: 1, 2, 4, 8, or full page free Auto precharge, includes concurrent auto precharge Timing (cycle time) and auto refresh modes 3 6ns (167 MHz) -6A Self refresh mode (not available on AT devices) 2 6ns (167 MHz) -6 Auto refresh 2 7ns (143 MHz) -7 64ms, 4096-cycle refresh (commercial and Revision :G/:L industrial) Special options 16ms, 4096-cycle refresh (automotive) 4 Automotive grade A LVTTL-compatible inputs and outputs Product longevity program X Single 3.3V 0.3V power supply Operating temperature range Supports CAS latency (CL) of 1, 2, and 3 Industrial (40C to +85C) IT AEC-Q100 5 Automotive (40C to +105C) AT PPAP submission 8D response time 1. Off-center parting line. Notes: 2. Available only on Revision G. 3. Available only on Revision L. 4. Some automotive parts are included in the product longevity program (PLP) and some are not, see www.micron.com/plp for a list of PLP parts. 5. Contact Micron for availability. Table 1: Key Timing Parameters CL = CAS (READ) latency Clock t t t t Speed Grade Frequency (MHz) Target RCD- RP-CL RCD (ns) RP (ns) CL (ns) -6 167 3-3-3 18 18 18 -6A 167 3-3-3 18 18 18 -7 143 3-3-3 15 15 15 PDF: 09005aef84ee4811 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 128mb x32 ait-aat sdram.pdf - Rev. C 4/16 EN 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.128Mb: x32 Automotive SDRAM Features Table 2: Address Table Parameter 4 Meg x 32 Configuration 1 Meg x 32 x 4 banks Refresh count 4K Row addressing 4K A 11:0 Bank addressing 4 BA 1:0 Column addressing 256 A 7:0 Table 3: 128Mb (x32) SDR Part Numbering Part Numbers Architecture MT48LC4M32B2TG 4 Meg x 32 MT48LC4M32B2P 4 Meg x 32 1 MT48LC4M32B2F5 4 Meg x 32 1 MT48LC4M32B2B5 4 Meg x 32 Note: 1. FBGA Device Decoder: www.micron.com/decoder. PDF: 09005aef84ee4811 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 128mb x32 ait-aat sdram.pdf - Rev. C 4/16 EN 2012 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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