4N22A 4N23A JAN, JANTX, JANTXV, AND JANS SINGLE CHANNEL OPTOCOUPLERS OPTOELECTRONIC PRODUCTS 4N24A DIVISION 01/14/2011 Features: Applications: Qualified to MIL-PRF-19500/486 Eliminate ground loops Collector is electrically isolated from the case Overall current gain: 1.5 typical (4N24A) Level shifting Base lead provided for conventional transistor Line receiver biasing Switching power supplies Rugged package Motor control High gain, high voltage transistor 1 kV electrical isolation DESCRIPTION A Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22A, 4N23A, and 4N24A differ from the 4N22, 4N23, and 4N24 only in that the collector of the transistor is isolated from the case. The 4N22A, 4N23A and 4N24A can be tested to customer specifications. *ABSOLUTE MAXIMUM RATINGS Input to Output Voltage ....................................................................................................................................................... 1 kV Emitter-Collector Voltage ......................................................................................................................................................... 7 V Collector-Emitter Voltage ....................................................................................................................................................... 40 V Collector-Base Voltage .......................................................................................................................................................... 45 V Reverse Input Voltage ............................................................................................................................................................ 2 V Input Diode Continuous Forward Current at (or below) 25C Free-Air Temperature (see note 1) ................................... 40 mA Peak Forward Input Current (Value applies for tw < 1 s PRR < 300 pps) ............................................................................. 1 A Continuous Collector Current ............................................................................................................................................. 50 mA Continuous Transistor Power Dissipation at (or below) 25C Free-Air Temperature (see Note 2) ............................... 300 mW Storage Temperature .......................................................................................................................................... -65C to +125C Operating Free-Air Temperature Range ............................................................................................................ -55C to +125C Lead Solder Temperature (10 seconds max., 1/16 from case) ........................................................................................ 240C Notes: 1. Derate linearly to 125C free-air temperature at the rate of 0.40 mA/C above 65C. 2. Derate linearly to 125C free-air temperature at the rate of 5 mW/C above 65C. JEDEC registered data Package Dimensions Schematic Diagram 0.185 4.70 0.155 3.94 0.045 1.14 A 5 3 C 45 0.029 0.73 0.040 1.02 MAX 0.034 0.86 0.028 0.71 1 2 7 1 E 0.335 8.51 0.370 9.40 0.200 5.08 3 0.305 7.75 0.336 8.53 6 5 6 LEADS 0.019 0.48 K 7 2 B 0.016 0.41 0.500 12.70 MIN COLLECTOR IS COMMON TO CASE. THE COLLECTOR OF THE TRANSISTOR IS ISOLATED FROM THE CASE. ALL LINEAR DIMENSIONS ARE IN INCHES MILLIMETERS . MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES MICROPAC.COM 4N22A, 4N23A, and 4N24A JAN, JANTX, JANTXV, AND JANS SINGLE CHANNEL OPTOCOUPLERS 01/14/2011 *ELECTRICAL CHARACTERISTICS INPUT LED T = 25 C Unless otherwise specified A PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE Input Diode Static Reverse Current I 100 nA V = 2 V R R Input Diode Static Forward Voltage -55 C 1 1.7 +25 C V 0.8 1.5 V I = 10 mA F F +125 C 0.7 1.3 *OUTPUT TRANSISTOR TA = 25 C Unless otherwise specified PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE Collector-Base Breakdown Voltage V 45 V I = 100 A, I = 0, I = 0 (BR)CBO C E F Collector-Emitter Breakdown Voltage V 40 V I = 1 mA, I = 0, I = 0 (BR)CEO C B F Emitter-Base Breakdown Voltage V 7 V I = 0, I = 100 A, I = 0 (BR)EBO B E F *COUPLED CHARACTERISTICS T = 25 C Unless otherwise specified A PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE On State Collector Current 4N22A 0.15 4N23A I 0.2 mA V = 5 V, I = 0, I = 2 mA C(ON) CE B F 4N24A 0.4 On State Collector Current 4N22A 2.5 4N23A I 6 mA V = 5 V, I = 0, I = 10 mA C(ON) CE B F 4N24A 10 On State Collector Current 4N22A 1 -55 C 4N23A I 2.5 mA V = 5 V, I = 0, I = 10 mA C(ON) CE B F 4N24A 4 On State Collector Current 4N22A 1 +100 C 4N23A I 2.5 mA V = 5 V, I = 0, I = 10 mA C(ON) CE B F 4N24A 4 Off State Collector Current +25 C I 100 nA V = 20 V, I = 0, I = 0 mA C(OFF) CE B F Off State Collector Current +100 C I 100 A V = 20 V, I = 0, I = 0 mA C(OFF) CE B F Collector-Emitter Saturation Voltage 4N22A V 0.3 V I = 2.5 mA, I = 0, I = 20 mA CE(SAT) C B F 4N23A V 0.3 V I = 5 mA, I = 0, I = 20 mA CE(SAT) C B F 4N24A V 0.3 V I = 10 mA, I = 0, I = 20 mA CE(SAT) C B F 11 Input to Output Resistance ALL R 10 V = 1 kV 1 I-O IN-OUT Input to Output Capacitance ALL C 5 pF F = 1 MHz, V = 1 kV 1 I-O IN-OUT Rise Time 4N22A 15 4N23A t 15 s V = 10 V, I = 10 mA, R = 100 r CC F L 4N24A 20 Fall Time 4N22A 15 4N23A t 15 s V = 10 V, I = 10 mA, R = 100 f CC F L 4N24A 20 NOTES: 1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together. RECOMMENDED OPERATING CONDITIONS: PARAMETER SYMBOL MIN MAX UNITS Input Current, Low Level I 0 1 A FL Input Current, High Level I 2 10 mA FH Supply Voltage V 5 10 V CC MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES MICROPAC.COM