Product Information

4N47

4N47 electronic component of Micropac

Datasheet
Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin TO-5

Manufacturer: Micropac
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

8: USD 41.8744 ea
Line Total: USD 335

7 - Global Stock
Ships to you between
Tue. 07 May to Mon. 13 May
MOQ: 8  Multiples: 8
Pack Size: 8
Availability Price Quantity
7 - Warehouse 1


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 8
Multiples : 8

Stock Image

4N47
Micropac

8 : USD 23.9918
2480 : USD 23.115
4960 : USD 22.5112
24800 : USD 22.061

     
Manufacturer
Product Category
Rise Time
Fall Time
Package / Case
If - Forward Current
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Pd - Power Dissipation
Mounting Style
Input Type
Forward Voltage
Operating Temperature Classification
Operating Temp Range
Number Of Elements
Collector Current Dc
Collector-Emitter Voltage
Reverse Breakdown Voltage
Pin Count
Rad Hardened
Output Device
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4N47 4N48 JAN, JANTX, JANTXV, AND JANS SINGLE CHANNEL OPTOCOUPLERS 4N49 06/23/03 Features: Applications: Certified to MIL-PRF-19500/548 Collector in electrical contact with case Eliminate ground loops Level shifting High Reliability Base lead provided for conventional transistor Line receiver biasing Switching power supplies Rugged package Motor control High gain, high voltage transistor +1kV electrical isolation DESCRIPTION Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47, 4N48 and 4N49s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANTX, JANTXV and JANS quality levels. *ABSOLUTE MAXIMUM RATINGS Input to Output Voltage.............................................................................................................................................................1kV Emitter-Collector Voltage............................................................................................................................................................7V Collector-Emitter Voltage .........................................................................................................................................................40V Collector-Base Voltage.............................................................................................................................................................45V Reverse Input Voltage ...............................................................................................................................................................2V Input Diode Continuous Forward Current at (or below) 25C Free-Air Temperature (see note 1) ......................................40mA Peak Forward Input Current (Value applies for tw < 1s, PRR < 300 pps) ...............................................................................1A Continuous Collector Current ................................................................................................................................................50mA Continuous Transistor Power Dissipation at (or below) 25C Free-Air Temperature (see Note 2) ................................. 300mW Storage Temperature........................................................................................................................................... -65C to +125C Operating Free-Air Temperature Range.............................................................................................................. -55C to +125C Lead Solder Temperature (10 seconds, 1/16 from case) ...................................................................................................240C Notes: 1. Derate linearly to 125C free-air temperature at the rate of 0.40 mA/C above 65C. 2. Derate linearly to 125C free-air temperature at the rate of 3 mW/C. *JEDEC registered data Package Dimensions Schematic Diagram 0.185 4.70 0.155 3.94 0.045 1.14 A 5 3 C 45 0.029 0.73 0.040 1.02 MAX 0.034 0.86 0.028 0.71 1 2 7 1 E 0.200 5.08 0.335 8.51 0.370 9.40 3 0.305 7.75 0.336 8.53 6 5 6 LEADS 0.019 0.48 K 7 2 B 0.016 0.41 0.500 12.70 MIN COLLECTOR IS COMMON TO CASE. ALL LINEAR DIMENSIONS ARE IN INCHES MILLIMETERS . MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES MICROPAC.COM 4N47, 4N48, and 4N49 JAN, JANTX, JANTXV, AND JANS SINGLE CHANNEL OPTOCOUPLERS 06/23/03 *ELECTRICAL CHARACTERISTICS T = 25 C Unless otherwise specified A PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE Input Diode Static Reverse Current IR 100 nA V = 2V R Input Diode Static Forward Voltage -55 C 1.0 1.7 +25 C V 0.8 1.4 1.5 V I = 10mA F F +100 C 0.7 1.3 *OUTPUT TRANSISTOR T = 25 C Unless otherwise specified A PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE Collector-Base Breakdown Voltage V 45 V I = 100A, I = 0, I = 0 (BR)CBO C E F Collector-Emitter Breakdown Voltage V 40 V I = 1mA, I = 0, I = 0 (BR)CEO C B F Emitter-Collector Breakdown Voltage V 7 V I = 0, I = 100A, I = 0 (BR)ECO B E F *COUPLED CHARACTERISTICS T = 25 C Unless otherwise specified A PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE On State Collector Current 4N47 0.5 mA 4N48 I 1.0 5 V = 5V, I = 0, I = 1mA C(ON) CE B F 4N49 2.0 10 On State Collector Current 4N47 0.7 mA -55 C 4N48 I 1.4 V = 5V, I = 0, I = 2mA C(ON) CE B F 4N49 2.8 On State Collector Current 4N47 0.5 mA +100 C 4N48 I 1.0 V = 5V, I = 0, I = 2mA 2 C(ON) CE B F 4N49 2.0 Off State Collector Current +25 C I 100 nA V = 20V, I = 0, I = 0mA C(OFF) CE B F Off State Collector Current +100C I 100 A V = 20V, I = 0, I = 0mA C(OFF) CE B F Collector-Emitter Saturation Voltage 4N47 V 0.3 V I = 0.5mA, I = 0, I = 2mA CE(SAT) C B F 4N48 V 0.3 V I = 1mA, I = 0, I = 2mA CE(SAT) C B F 4N49 V 0.3 V I = 2mA, I = 0, I = 2mA CE(SAT) C B F 11 Input to Output Resistance R 10 V = 1kV 1 I-O IN-OUT Input to Output Capacitance C 5 pF f = 1MHz, V = 1kV 1 I-O IN-OUT Rise Time/ Fall Time 4N47 t / t 20 s r f Phototransistor Operation 4N48 t / t 25 s V = 10V, I = 10mA, R = 100 r f CC F L 4N49 t / t 25 s r f Rise Time/ Fall Time 4N47 t / t 0.85 s r f Photodiode Operation 4N48 t / t 0.85 s V = 10V, I = 10mA, R = 100 r f CC F L 4N49 t / t 0.85 s r f NOTES: 1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together. 2. This parameter measured using pulse techniques t = 100 s, duty cycle 1%. W RECOMMENDED OPERATING CONDITIONS: PARAMETER SYMBOL MIN MAX UNITS Input Current, Low Level IFL 0 100 A Input Current, High Level IFH 2 10 mA Supply Voltage VCC 5 35 V SELECTION GUIDE PART NUMBER PART DESCRIPTION 4N47 Commercial 4N48 Commercial 4N49 Commercial JAN4N47 JAN Screened JAN4N48 JAN Screened JAN4N49 JAN Screened JANTX4N47 JANTX Screened JANTX4N48 JANTX Screened JANTX4N49 JANTX Screened JANTXV4N47 JANTXV Screened JANTXV4N48 JANTXV Screened JANTXV4N49 JANTXV Screened JANS4N47 JANS Screened JANS4N48 JANS Screened JANS4N49 JANS Screened *JEDEC registered data MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES MICROPAC.COM

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Micropac Industries
Micropac Industries, Inc.

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