PESD3V3T1BLYL

PESD3V3T1BL Bidirectional ESD protection diode 21 November 2018 Product data sheet 1. General description Bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882 leadless ultra small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Bidirectional ESD protection of one line Ultra small SMD plastic package 1 x 0.6 x 0.48 mm ESD protection up to 30 kV Very high surge robustness I = 12 A for 8/20 s average measured PP AEC-Q101 qualified 3. Applications ESD and surge protection for interface lines 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse standoff T = 25 C - - 3.3 V RWM amb voltage I rated peak pulse t = 8/20 s 1 - - 10 A PPM p current V clamping voltage I = 10 A t = 8/20 s T = 25 C 1 - 9.3 11 V CL PPM p amb 1 Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K1 cathode 1 1 K1 K2 1 2 2 K2 cathode 2 sym045 Transparent top view DFN1006-2 (SOD882) 1 The marking band indicates the cathodeNexperia PESD3V3T1BL Bidirectional ESD protection diode 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD3V3T1BL DFN1006-2 plastic, leadless ultra small package 2 terminals 0.65 mm pitch SOD882 1 mm x 0.6 mm x 0.48 mm body 7. Marking Table 4. Marking codes Type number Marking code PESD3V3T1BL L6 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit I rated peak pulse current t = 8/20 s 1 - 10 A PPM p T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg ESD maximum ratings V electrostatic discharge IEC 61000-4-2 (contact discharge) 2 - 30 kV ESD voltage 1 Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. 2 Device stressed with ten non-repetitive ESD pulses. 001aaa630 I PP 120 100 % 100 % I 8 s PP 90 % I PP (%) 80 -t e 50 % I 20 s PP 40 10 % t t = 0.6 ns to 1 ns 0 r 0 10 20 30 40 30 ns t (s) 60 ns 001aaa631 Fig. 2. ESD pulse waveform according to IEC Fig. 1. 8/20 s pulse waveform according to 61000-4-2 IEC 61000-4-5 PESD3V3T1BL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 21 November 2018 2 / 11