Product Information

PESD3V3V4UG,115

PESD3V3V4UG,115 electronic component of NXP

Datasheet
TVS Diode Arrays 3.3V QUAD ESD PROTCT
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1673 ea
Line Total: USD 501.9

0 - Global Stock
MOQ: 3000  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 3000
Multiples : 1
3000 : USD 0.1673

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Polarity
Termination Style
Breakdown Voltage
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Peak Surge Current
Capacitance
Dimensions
Brand
Channels
Mounting Style
Peak Pulse Power Dissipation
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Additional Infomation About Product

PESDxV4UF PESDxV4UG PESDxV4UW Very low capacitance unidirectional quadruple ESD protection diode arrays Rev. 03 28 January 2008 Product data sheet 1. Product prole 1.1 General description Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients. Table 1. Product overview Type number Package Package conguration NXP JEITA JEDEC PESD3V3V4UF SOT886 - MO-252 leadless ultra small PESD5V0V4UF SOT886 - MO-252 leadless ultra small PESD3V3V4UG SOT353 SC-88A - very small PESD5V0V4UG SOT353 SC-88A - very small PESD3V3V4UW SOT665 - - ultra small and at lead PESD5V0V4UW SOT665 - - ultra small and at lead 1.2 Features n ESD protection of up to four lines n Ultra low leakage current: I =25nA RM n Very low diode capacitance n ESD protection up to 12 kV n Max. peak pulse power: P =16W n IEC 61000-4-2 level 4 (ESD) PP n Low clamping voltage: V =11V n IEC 61000-4-5 (surge) I = 1.5 A CL PP 1.3 Applications n Computers and peripherals n Communication systems n Audio and video equipment n Portable electronics n Cellular handsets and accessories n Subscriber Identity Module (SIM) card protectionPESDxV4UF/G/W NXP Semiconductors Very low capacitance quadruple ESD protection diode arrays 1.4 Quick reference data Table 2. Quick reference data T =25 C unless otherwise specied. amb Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse standoff voltage RWM PESD3V3V4UF - - 3.3 V PESD3V3V4UG PESD3V3V4UW PESD5V0V4UF - - 5.0 V PESD5V0V4UG PESD5V0V4UW C diode capacitance f = 1 MHz V =0V d R PESD3V3V4UF - 1518pF PESD3V3V4UG PESD3V3V4UW PESD5V0V4UF - 1215pF PESD5V0V4UG PESD5V0V4UW 2. Pinning information Table 3. Pinning Pin Description Simplied outline Symbol PESD3V3V4UF PESD5V0V4UF 1 cathode (diode 1) 1 2 3 2 common anode 1 6 3 cathode (diode 2) 2 5 4 cathode (diode 3) 3 4 5 common anode 006aaa156 6 5 4 6 cathode (diode 4) bottom view PESD3V3V4UG PESD5V0V4UG 1 cathode (diode 1) 5 4 2 common anode 1 5 3 cathode (diode 2) 2 4 cathode (diode 3) 3 4 132 5 cathode (diode 4) 006aaa157 PESD3V3V4UW PESD5V0V4UW 1 cathode (diode 1) 5 4 2 common anode 1 5 3 cathode (diode 2) 2 4 cathode (diode 3) 3 4 5 cathode (diode 4) 006aaa157 12 3 PESDXV4UF G W 3 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 28 January 2008 2 of 16

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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