NTE46 Silicon NPN Transistor Darlington, General Purpose Amplifier, Preamp, Driver Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CES CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Resistance, Junction to Case, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W JC Thermal Resistance, Junction to Ambient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W JA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown V I = 100 A, V = 0 100 V (BR)CES C BE Voltage CollectorBase Breakdown Voltage V I = 100 A, I = 0 100 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 10 A, I = 0 12 V (BR)EBO E C Collector Cutoff Voltage I V = 80V, I = 0 100 nA CBO CB E I V = 80V, V = 0 500 nA CES CE BE Emitter Cutoff Current I V = 10V, I = 0 100 nA EBO BE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 10mA, V = 5V 10,000 FE C CE I = 100mA, V = 5V 10,000 C CE CollectorEmitter Saturation Voltage V I = 10mA, I = 0.01mA 0.7 1.2 V CE(sat) C B I = 100mA, I = 0.1mA 0.8 1.5 V C B BaseEmitter ON Voltage V I = 100mA, V = 5V 1.4 2.0 V BE(on) C CE SmallSignal Characteristics Current GainBandwidth Product f I = 10mA, V = 5V, 125 200 MHz T C CE f = 100MHz, Note 2 Output Capacitance C V = 10V, I = 0, f = 100kHz 5.0 8.0 pF obo CB E Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2% Note 2. f = h f T fe test .135 (3.45) Min .210 (5.33) Max Seating Plane C B .500 .021 (.445) Dia Max (12.7) Min E E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max