NTE464 (PCh) & NTE465 (NCh) Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications TO72 Type Package Absolute Maximum Ratings: DrainSource Voltage, V .......................................................... 25V DS DrainGate Voltage, V ............................................................ 30V DG GateSource Voltage, V ......................................................... 30V GS Gate Current, I .................................................................. 30mA G Total Device Dissipation (T = +25 C), P ......................................... 300mW A D Derate Above 25 C ..................................................... 1.7mW/ C Total Device Dissipation (T = +25 C), P ......................................... 800mW C D Derate Above 25 C .................................................... 4.56mW/ C Operating Junction Temperature, T ............................................... +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage V I = 10 A, V = 0 25 V (BR)DSX D GS ZeroGateVoltage Drain Current I V = 10V, V = 0, T = +25 C 10 nA DSS DS GS A V = 10V, V = 0, T = +150 C 10 A DS GS A Gate Reverse Current I V = 30V, V = 0 10 pA GSS GS DS ON Characteristics Gate Threshold Voltage V V = 10V, I = 10 A 1 5 V GS(Th) DS D DrainSource OnVoltage V I = 2mA, V = 10V 1 V DS(on) D GS OnState Drain Current I V = 10V, V = 10V 3 mA D(on) GS DS Rev. 1013Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit SmallSignal Characteristics DrainSource Resistance NTE464 r V = 10V, I = 0, f = 1kHz 600 ds(on) GS D NTE465 300 Forward Transfer Admittance y V = 10V, I = 2mA, f = 1kHz 1000 mhos fs DS D Input Capacitance C V = 10V, V = 0, f = 140kHz 5 pF iss DS GS Reverse Transfer Capacitance C V = 0, V = 0, f = 140kHz 1.3 pF rss DS GS DrainSubstrate Capacitance NTE464 C V = 10V, f = 140kHz 4 pF d(sub) D(SUB) NTE465 5 pF Switching Characteristics TurnOn Delay t 45 ns I = 2mA, V = 10V, V = 10V d1 D DS GS Rise Time t 65 ns r TurnOff Delay t 60 ns d2 Fall Time t 100 ns f NTE464 .220 (5.58) Dia .185 (4.7) Dia D .190 Case (4.82) .030 (.762) G S .500 (12.7) Min NTE465 .018 (0.45) Dia Gate D Source Drain Case G S 45 Case .040 (1.02)