Product Information

NTE5728

NTE5728 electronic component of NTE

Datasheet
Module; double series; 1.6kV; 250A; 52MM; Ufmax:1.73V; Ifsm:8.5kA

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 414.518 ea
Line Total: USD 414.52

1 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 497.725
3 : USD 468.8125
5 : USD 443.125
10 : USD 436.4875
15 : USD 429.9375

     
Manufacturer
Product Category
Electrical Mounting
Mounting
Case
Semiconductor Structure
Type Of Module
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
Load Current
Gate Current
LoadingGif

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NTE5728 Powerblock Thyristor Module Features: Electrically Isolated Base Plate Pressure Contact Technology with Increased Power Cycling Capability Space and Weight Savings Applications: AC/DC Motor Drives Various Rectifiers DC Supply for PWM Inverter Ratings and Characteristics: (T = +125C unless otherwise specified) J Maximum Mean On State Current, I T(AV) (T = +70C, 180, Half Sine Wave, 50Hz, Single Side Cooled) ................... 250A C Maximum RMS On State Current, I ............................................ 393A T(RMS) Maximum Repetitive Peak OffState Voltage (V = 1800V, t = 10ms), V .......... 1600V DSM p DRM Maximum Repetitive Peak Reverse Voltage (V = 1800V, t = 10ms), V ........... 1600V RSM p RRM Maximum Repetitive Peak Current, I , I ....................................... 30mA DRM RRM Maximum Surge On State Current (10ms Half Sine Wave, V = 960V), I ............. 8.5KA R TSM 2 2 2 3 Maximum I t for Fusing Coordination (10ms Half Sine Wave, V = 960V), I t ....... 360A s * 10 R Maximum Threshold Voltage, V ................................................... 0.9V TO OnState Slope Resistance, r ................................................... 0.93m T Maximum Peak On State Voltage (I = 750A), T = +25C), V ...................... 1.73V TM J TM Critical Rate of Rise of OffState Voltage (V = 1072V), dv/dt ....................... 800V/s DM Critical Rate of Rise of On State Current, di/dt (I = 500A, Gate Source 1.5A, t 0.5s Repetitive) ......................... 100A/s TM r RMS Isolation Voltage (50Hz, t = 1s Min, I = 1mA Max), V ........................ 3600V ISO ISO Storage Temperature Range, T .......................................... 40 to +125C stg Thermal Resistance, Junction toCase (Single Side Cooled), R ................. 0.12C/W thJC Thermal Resistance, Case toSink (Single Side Cooled), R ..................... 0.04C/W thCS Typical Thermal Connection Torque, F .......................................... 4.0N m m Typical Mounting Torque, F .................................................... 6.0N m m Rev. 111Electrical Specifications: Parameter Symbol Test Conditions Min Typ Max Unit Gate Trigger Current I V = 12V, I = 1A, T = +25C 30 180 mA GT A A J Gate Trigger Voltage V 1 3 V GT Holding Current I 20 150 mA H Non Trigger Gate Voltage V V = 1072V, T = +125C 0.2 V GD DM J Circuit Diagram G2 K2 AC + K1 G1 AC + K2 G2 G1 K1 M8 x 1.25 Screw 1.380 1.120 (28.0) (3 Places) (35.0) .240 (6.0) 1.500 .790 (38.0) (20.0) 1.970 (50.0) .350 (9.0) .240 (6.0) 3.150 (80.0) 4.530 (115.0) 2.010 (51.0) 1.260 (32.0) .390 3.620 (92.0) (10.0)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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