DocumentNumber:AFT31150N NXPSemiconductors Rev. 0, 05/2017 TechnicalData RFPowerLDMOSTransistor AFT31150N N--Channel Enhancement--ModeLateral MOSFET ThisRFpowertransistorisdesignedforapplicationsoperatingat frequencies between2700and3100MHz.This deviceis suitablefor usein pulseapplications. TypicalPerformance: In27003100MHz referencecircuit, V =32Vdc 27003100MHz,150WPEAK,32V DD AIRFASTRFPOWERLDMOS P Frequency G IRL out ps D TRANSISTOR SignalType (W) (MHz) (dB) (%) (dB) (1) 27003100 Pulse(300 sec, 150Peak 17.2 49.0 6 15%Duty Cycle) LoadMismatch/Ruggedness Frequency P Test in SignalType VSWR (MHz) (W) Voltage Result (2) 3100 Pulse(300 sec, 10:1 6.8Peak 32 NoDevice 15%Duty Cycle) atallPhase (3dB Degradation OM--780--2L Angles Overdrive) PLASTIC 1. Thevalues shownarethecenterbandperformancenumbers across theindicated frequency range. 2. Measuredin3100MHz narrowbandproductiontestfixture. Features Characterizedwithseries equivalent large--signalimpedanceparameters Gate21 Drain Internally matchedfor easeof use Qualifieduptoamaximum of 32V operation DD IntegratedESD protection Greater negativegate--sourcevoltagerangefor improvedClass C operation (TopView) Recommendeddriver: AFIC31025N (25W) Note: Exposed backside of the package is IncludedinNXP product longevity program withassuredsupply for a thesourceterminalforthetransistor. minimum of 15years after launch TypicalApplications Figure1.PinConnections CommercialS--Bandradar systems Maritimeradar Weather radar 2017NXPB.V. AFT31150N RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V 0.5,+65 Vdc DSS Gate--SourceVoltage V 6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to+225 C J TotalDeviceDissipation T =25 C P 741 W C D Derateabove25 C 3.7 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalImpedance,JunctiontoCase Z 0.042 C/W JC Pulse:CaseTemperature76C,160W Peak,300 sec PulseWidth, 15%Duty Cycle,32Vdc,I =100mA,3100MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2500V ChargeDeviceModel(perJESD22--C101) C3,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 65 Vdc (BR)DSS (V =0Vdc,I =10 Adc) GS D ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =32Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS OnCharacteristics GateThresholdVoltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =180 Adc) DS D GateQuiescentVoltage V 1.1 1.6 2.1 Vdc GS(Q) (V =32Vdc,I =100mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =10Vdc,I =1.8Adc) GS D 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat