DocumentNumber:AFV10700H NXPSemiconductors Rev. 2, 08/2019 Technical Data RFPowerLDMOSTransistors AFV10700H N--Channel Enhancement--Mode Lateral MOSFETs AFV10700HS These RF power transistors are designed for pulse applications operating at AFV10700GS 960to1215MHz.Thesedevicesaresuitableforuseindefenseand commercial pulse applications with large duty cycles and long pulses, such as IFF,secondarysurveillanceradars,ADS--Btransponders,DMEandother complex pulse chains. 9601215MHz,700WPEAK,52V TypicalPerformance: In 10301090 MHz reference circuit, I =100 mA AIRFASTRFPOWERLDMOS DQ(A+B) TRANSISTORS V P Frequency G DD out ps D (1) SignalType (V) (W) (MHz) (dB) (%) 1030 50 800 Peak 17.5 52.1 Pulse (128 sec, 1090 700 Peak 19.0 56.1 10% Duty Cycle) 1030 52 850 Peak 17.5 51.7 1090 770 Peak 19.2 56.1 NI--780H--4L AFV10700H TypicalPerformance: In 9601215 MHz reference circuit, I =100 mA DQ(A+B) V P Frequency DD out G ps D SignalType (V) (W) (MHz) (dB) (%) 50 960 Pulse 747 Peak 16.7 50.8 (128 sec, 1030 713 Peak 16.5 49.7 4% Duty Cycle) NI--780S--4L 1090 700 Peak 16.5 47.1 AFV10700HS 1215 704 Peak 16.5 54.5 TypicalPerformance: In 1030 MHz narrowband production test fixture, I =100 mA DQ(A+B) V P Frequency G DD out ps D SignalType (V) (W) (MHz) (dB) (%) (2) 1030 Pulse 50 730 Peak 19.2 58.5 NI--780GS--4L (128 sec, AFV10700GS 10% Duty Cycle) NarrowbandLoadMismatch/Ruggedness Frequency P Test in SignalType VSWR (MHz) (W) Voltage Result (2) GateA DrainA 31 1030 Pulse >20:1 at 17.2 Peak 50 No Device (128 sec, AllPhase (3 dB Degradation 10% Duty Cycle) Angles Overdrive) 1. Measured in 10301090 MHz reference circuit (page 5). GateB42 DrainB 2. Measured in 1030 MHz narrowband production test fixture (page 9). Features (Top View) Internally input and output matched for broadband operation and ease of use Note: The backside of the package is the Device can be used in a single--ended, push--pull or quadrature configuration source terminalforthe transistor. Qualified up to a maximum of 55 V operation DD Figure1.PinConnections High ruggedness, handles > 20:1 VSWR Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation and gate voltage pulsing Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W) Included in NXP product longevity program with assured supply for a minimum of 15 years after launch 20172019NXP B.V. AFV10700HAFV10700HSAFV10700GS RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +105 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Operating Voltage V 55, +0 Vdc DD Storage Temperature Range T 65to+150 C stg Case Operating Temperature Range T 55 to +150 C C (1,2) Operating Junction Temperature Range T 55 to +225 C J TotalDevice Dissipation T =25 C P 526 W C D Derate above 25 C 2.63 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalImpedance, Junction to Case Z 0.030 C/W JC Pulse: Case Temperature 75C, 730 W Peak, 128 sec Pulse Width, 10%Duty Cycle, 50 Vdc, I =100 mA, 1030 MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2000 V Charge Device Model(perJESD22--C101) C3, passes 2000 V Table4.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 105 Vdc (BR)DSS (V =0Vdc,I =10 A) GS D Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =105 Vdc, V =0Vdc) DS GS OnCharacteristics (4) Gate Threshold Voltage V 1.3 1.8 2.3 Vdc GS(th) (V =10Vdc,I =260 Adc) DS D Gate Quiescent Voltage V 1.6 2.1 2.6 Vdc GS(Q) (V =50Vdc,I =100 mAdc, Measured in FunctionalTest) DD DQ(A+B) (4) Drain--Source On--Voltage V 0.28 Vdc DS(on) (V =10Vdc,I =2.6Adc) GS D (4,5) DynamicCharacteristics Reverse TransferCapacitance C 1.16 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at