CGD1042H 1 GHz, 23 dB gain high output power doubler Rev. 3 28 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits High output power capability Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermal optimized design 1.3 Applications CATV systems operating in the 40 MHz to 1000 MHz frequency range 1.4 Quick reference data Table 1. Quick reference data Bandwidth to 1000 MHz V =24V (DC) T =35 C unless otherwise specified. B mb Symbol Parameter Conditions Min Typ Max Unit G power gain f = 45 MHz - 21.5 - dB p f = 1000 MHz 22.0 23.0 24.0 dB 1 I total current 430 450 470 mA tot 1 Direct Current (DC).CGD1042H NXP Semiconductors 1 GHz, 23 dB gain high output power doubler 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 input 5 2, 3 common 13 57 9 1 9 5+V B 7, 8 common 23 78 9output sym095 3. Ordering information Table 3. Ordering information Type number Package Name Description Version CGD1042H - rectangular single-ended package aluminium flange SOT115J 2 vertical mounting holes 2 6-32 UNC and 2 extra horizontal mounting holes 7 gold-plated in-line leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V supply voltage - 30 V B V RF input voltage single tone - 75 dBmV i(RF) T storage temperature 40 +100 C stg T mounting base temperature 20 +100 C mb CGD1042H All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 28 September 2010 2 of 8