Product Information

CLF1G0060S-30U

CLF1G0060S-30U electronic component of NXP

Datasheet
RF JFET Transistors Broadband RF power GaN HEMT

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 282.4206
2 : USD 282.4206
5 : USD 282.4206
10 : USD 282.4206
25 : USD 282.4206
50 : USD 274.3356
100 : USD 260.7066
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Height
Length
Operating Temperature Range
Width
Brand
Forward Transconductance - Min
Number Of Channels
Factory Pack Quantity :
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
LoadingGif

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CLF1G0060-30 CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 7 5 February 2018 Product data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1. CW and pulsed RF application information Typical RF performance at T = 25 C I =70mA V = 50 V in a class-AB broadband demo case Dq DS board. Test signal f P G L p D (MHz) (W) (dB) (%) 1-Tone CW 500 30 15.6 60.7 1000 30 13.9 50.3 1500 30 13.7 50.8 2000 30 12.6 49 2500 30 14.2 55.6 1 1-Tone pulsed 500 30 16.6 61 1000 30 15.8 50 1500 30 15.5 52.5 2000 30 14.5 50 2500 30 15.9 59 1 Pulsed RF t = 100 s =10 %. p Table 2. 2-Tone CW application information Typical 2-Tone performance at T = 25 C I = 150 mA V = 50 V in a class-AB broadband case Dq DS demo board. Test signal f P IMD3 L(PEP) (MHz) (W) (dBc) 1 2-Tone CW 500 10 38 1000 10 50 1500 10 45 2000 10 50 2500 10 43 1 2-Tone CW f=1MHz.CLF1G0060-30 CLF1G0060S-30 Broadband RF power GaN HEMT 1.2 Features and benefits Frequency of operation is from DC to 6.0 GHz 30 W general purpose broadband RF Power GaN HEMT Excellent ruggedness (VSWR = 10 : 1) High voltage operation (50 V) Thermally enhanced package 1.3 Applications Commercial wireless infrastructure Industrial, scientific, medical (cellular, WiMAX) Radar Jammers Broadband general purpose amplifier EMC testing Public mobile radios Defense application 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol CLF1G0060-30 (SOT1227A) 1drain 1 1 2gate 2 1 3source 2 3 3 aaa-003693 CLF1G0060S-30 (SOT1227B) 1drain 1 1 2gate 2 1 3source 3 2 aaa-003693 1 Connected to flange. 3. Ordering information Table 4. Ordering information Type number Package Name Description Version CLF1G0060-30 - flanged ceramic package 2 mounting holes 2 leads SOT1227A CLF1G0060S-30 - earless flanged ceramic package 2 leads SOT1227B CLF1G0060-30 1G0060S-30 All information provided in this document is subject to legal disclaimers. Ampleon Netherlands B.V. 2018. All rights reserved. Product data sheet Rev. 7 5 February 2018 2 of 19

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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