X-On Electronics has gained recognition as a prominent supplier of 2SA1778-3-TB-E rf bipolar transistors across the USA, India, Europe, Australia, and various other global locations. 2SA1778-3-TB-E rf bipolar transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for rf bipolar transistors, ensuring timely deliveries around the world.

2SA1778-3-TB-E ON Semiconductor

2SA1778-3-TB-E electronic component of ON Semiconductor
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Part No.2SA1778-3-TB-E
Manufacturer: ON Semiconductor
Category:RF Bipolar Transistors
Description: 2SA1778-3-TB-E
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

179: USD 0.153 ea
Line Total: USD 27.39

Availability - 0
MOQ: 179  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 179
Multiples : 1
179 : USD 0.153

     
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We are delighted to provide the 2SA1778-3-TB-E from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA1778-3-TB-E and other electronic components in the RF Bipolar Transistors category and beyond.

2SA1778-3-TB-E is a PNP transistor manufactured by ON Semiconductor. It is a silicon epitaxial planar type transistor which is suitable for power supply and line output amplifier applications. The device features a low collector-emitter saturation voltage and a high current collecting capability of up to 600mA. Its maximum reverse collector-emitter voltage is 40V, operating temperature range of -55°C to +150°C, and a maximum collector-base voltage of 40V. Additionally, it has a high power dissipation of 2W and a minimum emitter-collector voltage of 1.5V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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