ESDR0544MDMR4G ON Semiconductor

ESDR0544M Transient Voltage Suppressors Low Capacitance ESD Protection for High Speed Data ESDR0544M ELECTRICAL CHARACTERISTICS (T =25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 1) 5.0 V RWM Breakdown Voltage V I = 1 mA, (Note 2) 6.0 V BR T Reverse Leakage Current I V = 5 V 1.0 A R RWM Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and GND 0.7 0.9 pF J R Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins 0.3 0.7 pF J R 1. TVS devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater than the DC RWM or continuous peak operating voltage level. 2. V is measured at pulse test current I . BR T