ESDU3121 12 V Unidirectional ESD and Surge Protection Device The ESDU3121 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, high peak pulse current handling capability and fast response time provide best www.onsemi.com in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, tablets, MP3 players, digital cameras and many other portable applications where board MARKING space comes at a premium. DIAGRAM Features X2DFN2 Low Clamping Voltage YK M CASE 714AB Low Leakage Small Body Outline: 1.0 mm x 0.6 mm YK = Specific Device Code M = Date Code Protection for the Following IEC Standards: IEC6100042 Level 4: 30 kV Contact Discharge IEC6100045 (Lightning): 8.5 A (8/20 s) These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 2 Compliant CATHODE ANODE Typical Applications Power Line Protection GPIO Protection ORDERING INFORMATION Device Package Shipping Table 1. MAXIMUM RATINGS Rating Symbol Value Unit ESDU3121MXT5G X2DFN2 8000 / Tape & (PbFree) Reel IEC 6100042 (ESD) Contact 30 kV For information on tape and reel specifications, Air 30 including part orientation and tape sizes, please Operating Junction Temperature T 65 to + 150 C refer to our Tape and Reel Packaging Specifications J Range Brochure, BRD8011/D. Storage Temperature Range T 65 to + 150 C STG Minimum Peak Pulse Current I 8.5 A PP Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: September, 2018 Rev. 1 ESDU3121/DESDU3121 Table 2. ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage V V V RWM C BR RWM V I V R F I Maximum Reverse Leakage Current V R RWM I T V Breakdown Voltage I BR T I Test Current T *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional Surge Protection Table 3. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 12 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 14.1 15 15.8 V BR T Reverse Leakage Current I V , I/O Pin to GND 0.1 A R RWM Reverse Peak Pulse Current I IEC6100045 (8x20 s) 8.5 A PP Clamping Voltage 8x20 s V I = 8.5 A 20.3 22 V C PP Waveform per Figure 3 Dynamic Resistance R I/O Pin to GND, IEC6100045 (8x20 s) 0.70 DYN Junction Capacitance C V = 0 V, f = 1 MHz 55 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2