X-On Electronics has gained recognition as a prominent supplier of ISL9R8120P2 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. ISL9R8120P2 Diodes - General Purpose, Power, Switching are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

ISL9R8120P2 ON Semiconductor

ISL9R8120P2 electronic component of ON Semiconductor
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Part No.ISL9R8120P2
Manufacturer: ON Semiconductor
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 8A 1200V STEALTH
Datasheet: ISL9R8120P2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 2.511 ea
Line Total: USD 125.55 
Availability - 0
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 50
Multiples : 50
50 : USD 2.511
100 : USD 2.0735
200 : USD 1.6362
400 : USD 1.3041
750 : USD 1.1502

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
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We are delighted to provide the ISL9R8120P2 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ISL9R8120P2 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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ISL9R8120P2, ISL9R8120S3S 8 A, 1200 V, STEALTH Diode June 2002 tm ISL9R8120P2 , ISL9R8120S3S Features 8 A, 1200 V, STEALTH Diode Stealth Recovery t = 300 ns ( I = 8 A) rr F Max Forward Voltage, V = 3.3 V ( T = 25C) F C The ISL9R8120P2, ISL9R8120S3S is a STEALTH diode optimized for low loss performance in high frequency hard 1200 V Reverse Voltage and High Reliability switched applications. The STEALTH family exhibits low Avalanche Energy Rated reverse recovery current (I ) and exceptionally soft RM(REC) RoHS compliant recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I and short ta phase reduce loss in switching RM(REC) Applications transistors. The soft recovery minimizes ringing, expanding Switch Mode Power Supplies the range of conditions under which the diode may be Hard Switched PFC Boost Diode operated without the use of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to UPS Free Wheeling Diode provide the most efficient and highest power density design Motor Drive FWD at lower cost. SMPS FWD Snubber Diode Package Symbol JEDEC TO-220AC JEDEC TO-263AB K ANODE CATHODE CATHODE CATHODE (BOTTOM SIDE (FLANGE) METAL) N / C A ANODE Device Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Rating Unit V Repetitive Peak Reverse Voltage 1200 V RRM V Working Peak Reverse Voltage 1200 V RWM V DC Blocking Voltage 1200 V R o I Average Rectified Forward Current (T = 105 C) 8 A F(AV) C I Repetitive Peak Surge Current (20 kHz Square Wave) 16 A FRM I Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) 100 A FSM P Power Dissipation 71 W D E Avalanche Energy (1 A, 40 mH) 20 mJ AVL T , T Operating and Storage Temperature Range -55 to 150 C J STG T Maximum Temperature for Soldering L T Leads at 0.063 in (1.6 mm) from Case for 10 s 300 C PKG Package Body for 10s, See Application Note AN-7528 260 C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 2002 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com ISL9R8120P2, ISL9R8120S3S Rev. BISL9R8120P2, ISL9R8120S3S 8 A, 1200 V, STEALTH Diode Package Marking and Ordering Information Device Marking Device Package Tape Width Quantity R8120P2 ISL9R8120P2 TO-220AC N/A 50 R8120S3S ISL9R8120S3S TO-263AB 24mm 800 Electrical Characteristics T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min Typ Max Unit Off State Characteristics I Instantaneous Reverse Current V = 1200 V T = 25C - - 100 A R R C T = 125C- - 1.0mA C On State Characteristics V Instantaneous Forward Voltage I = 8 A T = 25C- 2.83.3 V F F C T = 125C- 2.7 3.1 V C Dynamic Characteristics C Junction Capacitance V = 10 V, I = 0 A - 30 - pF J R F Switching Characteristics t Reverse Recovery Time I = 1 A, dI /dt = 100 A/s, V = 30 V - 25 32 ns rr F F R I = 8 A, dI /dt = 100 A/s, V = 30 V - 35 44 ns F F R I = 8 A, t Reverse Recovery Time - 300 - ns F rr dI /dt = 200 A/s, F I Reverse Recovery Current - 4.3 - A rr V = 780 V, T = 25C R C Q Reverse Recovered Charge - 525 - nC rr I = 8 A, t Reverse Recovery Time - 375 - ns F rr dI /dt = 200 A/s, F S Softness Factor (t /t)-9-- b a V = 780 V, R I Reverse Recovery Current - 5.5 - A rr T = 125C C Q Reverse Recovered Charge - 1.1 - C rr I = 8 A, t Reverse Recovery Time - 200 - ns F rr dI /dt = 1000 A/s, F S Softness Factor (t /t)-5.5-- b a V = 780 V, R I Reverse Recovery Current - 11 - A rr T = 125C C Q Reverse Recovered Charge - 1.2 - C rr dI /dt Maximum di/dt during t - 310 - A/s M b Thermal Characteristics R Thermal Resistance Junction to Case TO-220, TO-263 - - 1.75 C/W JC R Thermal Resistance Junction to Ambient TO-220, TO-263 - - 62 C/W JA 2002 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com ISL9R8120P2, ISL9R8120S3S Rev. B

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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