ISL9R860PF2 8 A, 600 V, STEALTH Diode Description The ISL9R860PF2 is a STEALTH diode optimized for low loss www.onsemi.com performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (I ) and rr exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I and short rr ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the 1 2 diode may be operated without the use of additional snubber circuitry. 1. Cathode 2. Anode Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Features Stealth Recovery t = 28 ns ( I = 8 A) rr F Max Forward Voltage, V = 2.4 V ( T = 25C) F C 600 V Reverse Voltage and High Reliability Avalanche Energy Rated 12 This Device is PbFree and is RoHS Compliant TO220, 2Lead Applications CASE 221AS Switch Mode Power Supplies Hard Switched PFC Boost Diode MARKING DIAGRAM UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode Y&Z&3&K R860PF2 Y = ON Semiconductor Logo &Z&3 = Data Code (Year & Week) &K = Lot R860PF2 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: March, 2019 Rev. 4 ISL9R860PF2/DISL9R860PF2 MAXIMUM RATINGS T = 25C unless otherwise noted C Symbol Parameter Rating Units V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R I Average Rectified Forward Current (T = 75C) 8 A F(AV) C I Repetitive Peak Surge Current (20 kHz Square Wave) 16 A FRM I Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) 100 A FSM P Power Dissipation 26 W D E Avalanche Energy (1 A, 40 mH) 20 mJ AVL T , T Operating and Storage Temperature Range 55 to 175 C J STG T Maximum Temperature for Soldering 300 C L Leads at 0.063 in (1.6 mm) from Case for 10 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted C Symbol Parameter Test Condition Min Typ Max Unit OFF STATE CHARACTERISTICS I Instantaneous Reverse Current V = 600 V T = 25C 100 A R R C T = 125C 1.0 mA C ON STATE CHARACTERISTICS V Instantaneous Forward Voltage I = 8 A T = 25C 2.0 2.4 V F F C T = 125C 1.6 2.0 V C DYNAMIC CHARACTERISTICS C Junction Capacitance V = 10 V , I = 0 A 30 pF J R F SWITCHING CHARACTERISTICS t Reverse Recovery Time I = 1 A, di /dt = 100 A/ s, V = 30 V 18 25 ns rr F F R I = 8 A, di /dt = 100 A/ s, V = 30 V 21 30 ns F F R t Reverse Recovery Time I = 8 A, di /dt = 200 A/s, V = 390 V, 28 ns rr F F R T = 25C C Maximum Reverse Recovery Current 3.2 A I rr Q Reverse Recovery Charge 50 nC rr t Reverse Recovery Time I = 8 A, di /dt = 200 A/s, V = 390 V, 77 ns F F R rr T = 125C C S Softness Factor (t /t ) 3.7 b a I Maximum Reverse Recovery Current 3.4 A rr Q Reverse Recovery Charge 150 nC rr Reverse Recovery Time I = 8 A, di /dt = 600 A/s, V = 390 V, 53 ns t rr F F R T = 125C C S Softness Factor (t /t ) 2.5 b a I Maximum Reverse Recovery Current 6.5 A rr Q Reverse Recovery Charge 195 nC rr dI /dt Maximum di/dt during t 500 A/ s M b Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2