X-On Electronics has gained recognition as a prominent supplier of ISL9R860PF2 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. ISL9R860PF2 Diodes - General Purpose, Power, Switching are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

ISL9R860PF2 ON Semiconductor

ISL9R860PF2 electronic component of ON Semiconductor
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Part No.ISL9R860PF2
Manufacturer: ON Semiconductor
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 8A 600V Stealth
Datasheet: ISL9R860PF2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1
1000 : USD 0.5608
10000 : USD 0.5381
100000 : USD 0.5273
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Obsolete
0
MOQ : 44
Multiples : 44
44 : USD 0.9916
75 : USD 0.9549
250 : USD 0.9549
1000 : USD 0.9181
3000 : USD 0.9181
N/A

Obsolete
0

Multiples : 2000
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.2353
10 : USD 2.1897
30 : USD 2.1575
100 : USD 2.1279
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.6173
10 : USD 1.3498
100 : USD 1.0103
500 : USD 0.8343
1000 : USD 0.6583
2000 : USD 0.6374
5000 : USD 0.6179
N/A

Obsolete
0
MOQ : 1000
Multiples : 1000
1000 : USD 0.8982
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
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We are delighted to provide the ISL9R860PF2 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ISL9R860PF2 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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ISL9R860PF2 8 A, 600 V, STEALTH Diode Description The ISL9R860PF2 is a STEALTH diode optimized for low loss www.onsemi.com performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (I ) and rr exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I and short rr ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the 1 2 diode may be operated without the use of additional snubber circuitry. 1. Cathode 2. Anode Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Features Stealth Recovery t = 28 ns ( I = 8 A) rr F Max Forward Voltage, V = 2.4 V ( T = 25C) F C 600 V Reverse Voltage and High Reliability Avalanche Energy Rated 12 This Device is PbFree and is RoHS Compliant TO220, 2Lead Applications CASE 221AS Switch Mode Power Supplies Hard Switched PFC Boost Diode MARKING DIAGRAM UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode Y&Z&3&K R860PF2 Y = ON Semiconductor Logo &Z&3 = Data Code (Year & Week) &K = Lot R860PF2 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: March, 2019 Rev. 4 ISL9R860PF2/DISL9R860PF2 MAXIMUM RATINGS T = 25C unless otherwise noted C Symbol Parameter Rating Units V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R I Average Rectified Forward Current (T = 75C) 8 A F(AV) C I Repetitive Peak Surge Current (20 kHz Square Wave) 16 A FRM I Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) 100 A FSM P Power Dissipation 26 W D E Avalanche Energy (1 A, 40 mH) 20 mJ AVL T , T Operating and Storage Temperature Range 55 to 175 C J STG T Maximum Temperature for Soldering 300 C L Leads at 0.063 in (1.6 mm) from Case for 10 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted C Symbol Parameter Test Condition Min Typ Max Unit OFF STATE CHARACTERISTICS I Instantaneous Reverse Current V = 600 V T = 25C 100 A R R C T = 125C 1.0 mA C ON STATE CHARACTERISTICS V Instantaneous Forward Voltage I = 8 A T = 25C 2.0 2.4 V F F C T = 125C 1.6 2.0 V C DYNAMIC CHARACTERISTICS C Junction Capacitance V = 10 V , I = 0 A 30 pF J R F SWITCHING CHARACTERISTICS t Reverse Recovery Time I = 1 A, di /dt = 100 A/ s, V = 30 V 18 25 ns rr F F R I = 8 A, di /dt = 100 A/ s, V = 30 V 21 30 ns F F R t Reverse Recovery Time I = 8 A, di /dt = 200 A/s, V = 390 V, 28 ns rr F F R T = 25C C Maximum Reverse Recovery Current 3.2 A I rr Q Reverse Recovery Charge 50 nC rr t Reverse Recovery Time I = 8 A, di /dt = 200 A/s, V = 390 V, 77 ns F F R rr T = 125C C S Softness Factor (t /t ) 3.7 b a I Maximum Reverse Recovery Current 3.4 A rr Q Reverse Recovery Charge 150 nC rr Reverse Recovery Time I = 8 A, di /dt = 600 A/s, V = 390 V, 53 ns t rr F F R T = 125C C S Softness Factor (t /t ) 2.5 b a I Maximum Reverse Recovery Current 6.5 A rr Q Reverse Recovery Charge 195 nC rr dI /dt Maximum di/dt during t 500 A/ s M b Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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