DATA SHEET www.onsemi.com ECOSPARK Ignition IGBT COLLECTOR 300 mJ, 400 V, NChannel Ignition IGBT R 1 GATE ISL9V3040x3ST-F085C R 2 Features SCIS Energy = 300 mJ at T = 25C J EMITTER Logic Level Gate Drive AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant Applications Automotive Ignition Coil Driver Circuits High Current Ignition System Coil on Plug Application 2 DPAK3 D PAK3 MAXIMUM RATINGS (T = 25C unless otherwise noted) CASE 369AS CASE 418AJ J Symbol Parameter Value Unit V BV Collector to Emitter Breakdown 400 CER Voltage (IC = 1 mA) V BV Emitter to Collector Voltage Reverse 24 ECS Battery Condition (IC = 10 mA) mJ E 300 ISCIS = 14.2 A, L = 3.0 mHy, SCIS25 TO2203LD RGE = 1 K , T = 25C (Note 1) C CASE 340AT mJ E ISCIS = 10.6 A, L = 3.0 mHy, 170 SCIS150 RGE = 1 K , T = 150C (Note 2) C MARKING DIAGRAMS A IC25 Collector Current Continuous 21 at VGE = 4.0 V, T = 25C C A AYWW IC110 Collector Current Continuous 17 XXX at VGE = 4.0 V, T = 110C C XXXXXG AYWWZZ V V Gate to Emitter Voltage Continuous 10 GEM V3040PC W PD Power Dissipation Total, T = 25C 150 C W/C Power Dissipation Derating, T > 25C 1 C C T , T 55 to +175 Operating Junction and Storage J STG Temperature A = Assembly Location C T Lead Temperature for Soldering 300 Y = Year L Purposes (1/8 from case for 10 s) WW = Work Week XXXX = Device Code C T Reflow Soldering according to 260 PKG G = PbFree Package JESD020C ZZ = Assembly Lot Number kV ESD HBMElectrostatic Discharge Voltage 4 V3040PC = Device Code at 100 pF, 1500 kV 2 CDMElectrostatic Discharge Voltage at 1 ORDERING INFORMATION See detailed ordering and shipping information on page 7 Stresses exceeding those listed in the Maximum Ratings table may damage the of this data sheet. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on the test conditions that is starting T = 25C, L = 3 mHy, ISCIS = 14.2 A, J VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. 2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on the test conditions that is starting T = 150C, L = 3mHy, ISCIS = 10.6 A, J VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2021 Rev. 2 ISL9V3040F085C/DISL9V3040x3ST F085C THERMAL RESISTANCE RATINGS Characteristic Symbol Max Units JunctiontoCase Steady State (Drain) R 1 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Symbol Parameter Test Conditions Min Typ. Max. Units OFF CHARACTERISTICS BV Collector to Emitter Breakdown I = 2 mA, V = 0 V, 370 400 430 V CER CE GE Voltage R = 1 k , GE T = 40 to 150C J BV Collector to Emitter Breakdown I = 10 mA, V = 0 V, 390 420 450 V CES CE GE Voltage R = 0, GE T = 40 to 150C J BV Emitter to Collector Breakdown I = 75 mA, V = 0 V, 30 V ECS CE GE Voltage T = 25C J BV Gate to Emitter Breakdown Voltage I = 2 mA 12 14 V GES GES I Collector to Emitter Leakage Current V = 175 V T = 25C 25 A CER CE J R = 1 k GE T = 150C 1 mA J I Emitter to Collector Leakage Current V = 24 V T = 25C 1 mA ECS EC J T = 150C 40 J R Series Gate Resistance 70 1 R Gate to Emitter Resistance 10K 26K 2 ON CHARACTERISTICS V Collector to Emitter Saturation I = 6 A, V = 4 V, T = 25C 1.25 1.65 V CE(SAT) CE GE J Voltage V Collector to Emitter Saturation I = 10 A, V = 4.5 V, T = 150C 1.58 1.80 V CE(SAT) CE GE J Voltage V Collector to Emitter Saturation I = 15 A, V = 4.5 V, T = 150C 1.90 2.20 V CE(SAT) CE GE J Voltage DYNAMIC CHARACTERISTICS Q Gate Charge I = 10 A, V = 12 V, V = 5 V 17 nC G(ON) CE CE GE V Gate to Emitter Threshold Voltage I = 1 mA T = 25C 1.3 2.2 V GE(TH) CE J V = V CE GE T = 150C 0.75 1.8 J V Gate to Emitter Plateau Voltage V = 12 V, I = 10 A 3.0 V GEP CE CE SWITCHING CHARACTERISTICS td Current TurnOn Delay V = 14 V, R = 1 , 0.7 4 s (ON)R CE L TimeResistive V = 5 V, R = 470 , GE G T = 25C J t Current Rise TimeResistive 2.1 7 rR td Current TurnOff Delay V = 300 V, L = 1 mH, 4.8 15 (OFF)L CE TimeInductive V = 5 V, R = 470 , GE G I = 6.5 A, T = 25C CE J t Current Fall TimeInductive 2.8 15 fL Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2