LC05132C01NMT CMOS LSI www.onsemi.com 1-Cell Lithium-Ion Battery Protection IC with integrated Power MOS FET Overview The LC05132C01NMT is a protection IC for 1-cell lithium-ion secondary batteries with integrated power MOS FET. Also it integrates highly accurate detection circuits and detection delay circuits to prevent batteries from over-charging, over-discharging, over-current discharging and over-current charging. In addition, main system can execute the power-on reset of itself by turning off the charge FET and discharge FET of LC05132C01NMT for a certain time period, with a reset signal. A battery protection system can be made by only LC05132C01NMT and WDFN6 2.6x4.0, 0.65P, Dual Flag few external parts. Feature Charge-and-discharge power MOSFET are integrated at Ta = 25C, VCC = 4.5V ON resistance (total of charge and discharge ) 11.2m (typ) Highly accurate detection voltage/current at Ta = 25C, VCC = 3.7V Over-charge detection 25mV Over-discharge detection 50mV Charge over-current detection 0.63A Discharge over-current detection 0.63A Delay time for detection and release (fixed internally) Discharge/Charge over-current detection is compensated for temperature dependency of power FET 0V battery charging : Inhibit Auto wake-up function battery charging : Inhibit Over charge detection voltage : 4.0V to 4.525V (5mV steps) Over charge release hysteresis : 0V to 0.3V (100mV steps) Over discharge detection voltage : 2.2V to 2.8V (50mV steps) Over discharge release hysteresis : 0V to 0.075V (25mV steps) Forcible charge-FET and discharge-FET OFF mode RSTB>VDD*0.8: Charge-FET and Discharge-FET=ON RSTB<VDD*0.2: Charge-FET and Discharge-FET=OFF Typical Applications Smart phone Tablet Wearable device ORDERING INFORMATION See detailed ordering and shipping information on page 16 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : November 2016 - Rev. 2 LC05132C01NMT/D LC05132C01NMT Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings Unit Supply voltage VCC Between PAC+ and VCC : R1=680 0.3 to 12.0 V S1 - S2 voltage VS1-S2 24.0 V CS VCC24.0 to VCC+0.3 V CS terminal Input voltage Charge or discharge current BAT, PAC 10.0 A RSTB Input voltage RSTB 0.3 to 7 V Storage temperature Tstg 55 to +125 C Current between S1 and S2(DC) ID VCC = 3.7V 10.0 A Current between S1 and S2 IDP Pulse Width<10us, duty cycle<1% 35 A (continuous pulse) Operating ambient temperature Topr 40 to +100 C Glass epoxy four-layer board Allowable power dissipation Pd 450 mW Board size L=38.7mm W=4.4mm H=1.6mm Junction temperature Tj 125 C Caution 1) Absolute maximum ratings represent the values which cannot be exceeded at any given time. Caution 2) If you intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for confirmation. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Example of Application Circuit PAC+ R1 VCC VCC RSTB RSTB R3 Controller IC C1 Battery VSS S1 S2 CS R2 PAC- Components Recommended value MAX unit Description R1 680 1k R2 1k 2k R3 1k 2k C1 1.0 - F * We dont guarantee the characteristics of the circuit shown above. www.onsemi.com 2